Physical and Modelling Concepts of Galvanomagnetic Effects in Bipolar Semiconductor Structures

Abstract

Àíàë³çóþòüñÿ îñíîâí³ ô³çè÷í³ ìåõàí³çìè ðîáîòè á³ïîëÿðíèõ íàï³âïðîâ³äíèêîâèõ ìàãí³-òî÷óòëèâèõ ñòðóêòóð (ÁÌÑ). Ïîêàçàíî, ùî âåðòèêàëüí³ ìàãí³òî÷óòëèâ³ ñòðóêòóðè ï³äëÿ-ãàþòü âèëó÷åííþ ç êëàñó ÁÌÑ, à ãîðèçîíòàëüí³ ç òî÷êè çîðó ìîäåëüíèõ óÿâëåíü ñêëàäà-þòü ºäèíèé êëàñ íåçàëåaeíî â³ä íàïðÿìêó ìàãí³òíî¿ îñ³. Ìåõàí³çìè ÷óòëèâîñò³ ÁÌÑ, â ÿêèõ âèçíà÷àþ÷èì ïàðàìåòðîì º ðóõëèâ³ñòü íîñ³¿â, äîïóñêàþòü ºäèíå ïî ôîðì³ ìîäåëüíå ïðåä-ñòàâëåííÿ ³ òîìó ìîaeóòü ðîçãëÿäàòèñÿ ÿê ºäèíèé ìåõàí³çì ïåðåðîçïîä³ëó. Ìàãí³òî÷óòëè-â³ñòü ÁÌÑ ïðè âèçíà÷åíí³ ¿¿ åôåêòèâí³ñòþ ïåðåòâîðåííÿ äîñèòü êîðåêòíî îïèñóºòüñÿ îä-íîâèì³ðíèì ð³âíÿííÿì áåçïåðåðâíîñò³, ïðè÷îìó íåçàëåaeíî â³ä êîíêðåòíèõ ìåaeîâèõ óìîâ.Êëþ÷îâ³ ñëîâà: íàï³âïðîâ³äíèêîâ³ ñòðóêòóðè, ìàãí³òî÷óòëèâ³ ñòðóêòóðè, ìàãí³òîòðàí-çèñòîðè, ìîäåëþâàííÿ. Abstract PHYSICAL AND MODELLING CONCEPTS OF GALVANOMAGNETIC EFFECTS IN BIPOLAR SEMICONDUCTOR STRUCTURES M. A. Glauberman, V. V. Yegorov, N. A. Kanischeva, V. V. KozelThe basic physical operation mechanisms of bipolar semiconductor magnetosensitive structures (BMSs) are analysed. The vertical structures have been shown to be subject to exclusion from the BMS class, and horizontal BMSs form a single class irrespective of their magnetic axis orientation. The BMSs sensitivity mechanisms having the charge mobility as the determining parameter allow a in-single model notion, and can be viewed as a single redistribution mechanism. When determined by transduction efficiency, the BMS magnetic sensitivity is quite correctly described by one-dimensional continuity equation irrespective of the boundary conditions.