Physical and electronic properties of semiconducting solid solutions of the Cd3P2–Zn3P2 system

Masumoto, Katashi; Isomura, Shigehiro; Sasaki, Keiko

doi:10.1002/pssa.2210060220

Cited by 19 publications

(5 citation statements)

References 11 publications

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“…As a result, Zn 3 P 2 and Zn 3 As 2 have pseudocubic crystal structures. However, it is not known whether they form a solid solution over the entire compositional range, as do Cd 3 P 2 –Cd 3 As 2 and Zn 3 P 2 –Cd 3 P 2 . − …”

Section: Resultsmentioning

confidence: 99%

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Park

Jang

et al. 2015

Nano Lett.

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Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1-xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0-1.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.

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Section: Resultsmentioning

confidence: 99%

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Park

Jang

et al. 2015

Nano Lett.

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“…Furthermore, that the effect of nanostructuring produced no reduction in the room temperature thermal conductivity of the nanowire pellets in the study of Brockway et al [20] suggests that these boundary effects occur at length scales smaller than 30e50 nm. If the largest room temperature thermal conductivity reported for Zn 3 P 2 (~2.5 W/m K by Masumoto et al [15]) is used as an estimate for the bulk value, the Zn 3 P 2 film of the present study has the value k Film ¼ 0.2k Bulk at room temperature. If it is assumed that the phonon MFP is independent of frequency and that the scattering processes of the film are equivalent to that of the bulk, with the effect of additional boundary scattering given by Matthiessen's rule, we find that…”

Section: Thermal Conductivity Below the Minimummentioning

confidence: 99%

Low thermal conductivity in nanocrystalline Zn3P2

Thompson

Vaddi

White

2016

Journal of Alloys and Compounds

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a b s t r a c tSemiconductors with low lattice thermal conductivity are important in the search for more efficient thermoelectric materials. The thermal conductivity of nanocrystalline (<7 nm) Zn 3 P 2, fabricated in thin film form by pulsed laser deposition, was measured from 80 K to 294 K. The thermal conductivity of the film showed weak temperature dependence in this temperature range and at 294 K had its highest value of 0.49 W/m K. Although Zn 3 P 2 and its family of isomorphic compounds are known to have intrinsically low thermal conductivity, at room temperature the thermal conductivity of this nanocrystalline film is 25% smaller than the calculated minimum thermal conductivity for Zn 3 P 2 . Analyzing the thermal conductivity data with the Callaway model revealed that the data could be well fit by considering only boundary scattering and point defect scattering. The boundary scattering length was in good agreement with the film's average crystallite size of 4.1 nm and the magnitude of the point defect scattering required the formation of V Zn -Zn i pairs from approximately 23% of the Zn sites. It is believed that a large number of point defects are responsible for the intrinsically low thermal conductivity of bulk Zn 3 P 2 and therefore the exceptionally low thermal conductivity found in the present study results from the nanometer dimensions of the crystallites. As previous studies have reported high Seebeck coefficients and electronic properties that are insensitive to grain boundaries in Zn 3 P 2 , the low thermal conductivity observed in the present study suggests that nanocrystalline Zn 3 P 2 should be further explored for use in thermoelectric applications.

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“…Phosphorus is an element with intriguing structure chemistry. 1 In the case of Cd the reactivity is reasonable and binaries like CdP 2 , 2-4 Cd 3 P 2 , 5,6 CdP 4 , 7 or Cd 7 P 10 (ref. 8) exist.…”

Section: Introductionmentioning

confidence: 99%

Low-activated Li-ion mobility and metal to semiconductor transition in CdP₂@Li phases

et al. 2015

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Solids with high ion mobility are of broad interest for energy storage applications. New systems featuring low-activated ion mobility are important to improve the performance in such systems. Herein we report on a model system dealing with such improved properties. Li 0.2 CdP 2 was synthesized from the elements, lithium as structure stabilizer and CdI 2 as reaction promoters in sealed silica ampoules at 823 K. It crystallizes tetragonal, in space group I4 1 22 (a-CdAs 2 structure type), with lattice parameters a ¼ 7.6691(8)Å, c ¼ 4.4467(4)Å and V ¼ 261.53(4)Å 3 . After 24 h of storage in air lithium ions can be removed in a spontaneous delithiation reaction resulting in Li(OH)$H 2 O formation on the surface of the crystals. Formed a 0 -CdP 2 adopts the a-CdAs 2 structure type. Both compounds consist of isolated cadmium atoms and helical 1 N [P À ]-chains generating empty channels suitable to accommodate Li ions. The heavy atom structure was determined by X-ray diffraction methods while a full model including lithium was derived from a combined solid state NMR and quantum chemical calculation approach. An low activation barrier range in the order of 0.1 to 0.2 eV was determined by NMR spectroscopy pointing towards an extraordinary high Li mobility in Li 0.2 CdP 2 . Of course a Cd-based solid will have certain disadvantages like toxicity and mass for storage applications but substitution of Cd by suitable lighter elements can solve this issue.

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Physical and electronic properties of semiconducting solid solutions of the Cd3P2–Zn3P2 system

Cited by 19 publications

References 11 publications

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Low thermal conductivity in nanocrystalline Zn3P2

Low-activated Li-ion mobility and metal to semiconductor transition in CdP₂@Li phases

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Physical and electronic properties of semiconducting solid solutions of the Cd3P2–Zn3P2 system

Cited by 19 publications

References 11 publications

Zn3P2–Zn3As2 Solid Solution Nanowires

Zn3P2–Zn3As2 Solid Solution Nanowires

Low thermal conductivity in nanocrystalline Zn3P2

Low-activated Li-ion mobility and metal to semiconductor transition in CdP2@Li phases

Contact Info

Product

Resources

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Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Low-activated Li-ion mobility and metal to semiconductor transition in CdP₂@Li phases