Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

Tamura, Yasutaka; Yoshihara, Ryo; Kakushima, Kuniyuki; Nohira, Hiroshi; Nakatsuka, Osamu; Ahmet, Parhat; Kataoka, Yuki; Nishiyama, Akira; Sugii, Nobuyuki; Tsutsui, Kazuo; Natori, Kenji; Hattori, Takeo

doi:10.1088/1742-6596/417/1/012015

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…However, the use of relatively thick ITO or YSZ layers as BE, prevents the introduction of ferroelectric YHO in CMOS processes. Here, we show that by using NiSi 2 as a BE (after Ni silicidation, resulting in a fluorite orthorhombic structure) [26][27][28][29] and relatively low temperature PDA, ferroelectric characteristics of 7 mol% Y-doped HfO 2 (YHO7) thin films are obtained while the endurance is enhanced when compared to TiN. This way, by using a simple YHO7/IL/NiSi 2 structure, we promote a reduction in the oxide defects' density so that the electrical and endurance properties of MIM capacitors are improved.…”

Section: Introductionmentioning

confidence: 78%

NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films

Molina

Hoshii

Ohmi

et al. 2020

Jpn. J. Appl. Phys.

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We exploit the uniform silicidation of an ultra-thin Ni film deposited on crystalline silicon that upon rapid thermal annealing transforms into NiSi 2 and then is used as a bottom electrode (BE) with the right structure for orthorhombic crystallization of Y-doped HfO 2 (YHO) during an additional post deposition annealing (PDA) process. Compared to a standard TiN BE in metal-insulator-metal structures, the use of NiSi 2 and PDA promotes a more reproducible and stable ferroelectric behavior of YHO thin films. In contrast to YHO/TiN, high reproducibility in the current-voltage characteristics as well as lower leakage currents for the YHO/NiSi 2 structures (after PDA below 600 °C) enable these devices to withstand up to 10e9 stressing cycles without significantly changing the magnitude of its original remanent polarization (Pr), thus ensuring small wake-up and/or fatigue behavior. All this is possible by the seemingly passivation effect of an interfacial layer developed at the YHO/NiSi 2 interface during PDA.

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Section: Introductionmentioning

confidence: 78%

NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films

Molina

Hoshii

Ohmi

et al. 2020

Jpn. J. Appl. Phys.

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Highly oriented NiSi2@Si thin-nanocomposite produced by solid state diffusion: Morphological and crystallographic characterization

Costa

Kellermann

Craievich

et al. 2022

Surfaces and Interfaces

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Influence of sputtering gas on resistivity of thin Ni silicide films

Imamura

Kakushima

Kataoka

et al. 2015

2015 China Semiconductor Technology International Conference

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Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

Cited by 4 publications

References 11 publications

NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films

NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films

Highly oriented NiSi2@Si thin-nanocomposite produced by solid state diffusion: Morphological and crystallographic characterization

Influence of sputtering gas on resistivity of thin Ni silicide films

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Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

Cited by 4 publications

References 11 publications

NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films

NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films

Highly oriented NiSi2@Si thin-nanocomposite produced by solid state diffusion: Morphological and crystallographic characterization

Influence of sputtering gas on resistivity of thin Ni silicide films

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NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films

NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films