Physical and Electrical Properties of Defects Formed in Rapid Thermal Processing

Abstract

RTP will be replaced with some of the conventional thermal processing employed in ULSI fabrication lines in near future. We show at first the device characteristics demanded for next generation DRAM which is a typical example of ULSIs and some issues to satisfy the demands. Next we show some candidates for RTP in the ULSI processes and discuss difference between RTP and the conventional thermal processes. We think one of the largest difference is the quenching Si wafers after short time annealing and by the quenching the deep levels due to fast diffusing atoms and point defects in Si are introduced. Experimental results of N2 and Cu related deep levels are shown as the examples of the deep levels induced by the quenching in Si. Finally, we propose the gettering method for them in RTP.