2022
DOI: 10.1016/j.tsf.2021.138997
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Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor

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Cited by 9 publications
(2 citation statements)
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“…Such changes in the crystalline structure alter the planar spacing and/or peak position of corresponding X-ray diffraction to more or fewer values and/or angles [33][34][35][36]. Practically, the properties of the nano-oxide product, including electrochemical and physical properties, can be strongly affected by the microstructural and crystalline features, such as crystallite size (CS), lattice parameters, and morphology of particles [37][38][39][40]. This makes it influential in accounting for the lattice developments attentively.…”
Section: Introductionmentioning
confidence: 99%
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“…Such changes in the crystalline structure alter the planar spacing and/or peak position of corresponding X-ray diffraction to more or fewer values and/or angles [33][34][35][36]. Practically, the properties of the nano-oxide product, including electrochemical and physical properties, can be strongly affected by the microstructural and crystalline features, such as crystallite size (CS), lattice parameters, and morphology of particles [37][38][39][40]. This makes it influential in accounting for the lattice developments attentively.…”
Section: Introductionmentioning
confidence: 99%
“…This makes it influential in accounting for the lattice developments attentively. One of the nondestructive analyses of the chemistry of the material is the X-ray diffraction (XRD) method which provides leading information on the crystallite structure and chemical composition [38,[40][41][42]. Multiple methods utilize XRD patterns to expound data and convert them to more perceptible information about the product.…”
Section: Introductionmentioning
confidence: 99%