Physical and electrical characteristics of metal/Dy2O3/p-GaAs structure

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO3and LaCr0.90Ir0.10O3perovskites

“…The complex electric modulus, M* ¼ M 0 + jM 00 , is inversely proportional to permittivity of the material, M* ¼ 1/3*. The Complex modulus also provides an alternative approach (i) to analyze the electrical response of the materials and has been adopted by scientists to study relaxation phenomena in ceramics materials and ionic conductors, [17][18][19][20][21][22][23][24] (ii) helps to conrm the ambiguity arising from the grain or grain boundary effect at elevated temperatures which may not be distinguished from complex impedance plots. The complex electric modulus has been discussed with both permittivity and impedance to study and analyze the contribution of the grain boundary on the relaxation mechanism of the materials also it offers us opportunities to investigate long-range conductions and localized dielectric relaxation phenomenon in microscopic level.…”

“…The complex electric modulus has been discussed with both permittivity and impedance to study and analyze the contribution of the grain boundary on the relaxation mechanism of the materials also it offers us opportunities to investigate long-range conductions and localized dielectric relaxation phenomenon in microscopic level. [17][18][19][20][21][22][23][24] The complex electric modulus is the inverse of complex permittivity and is given as follows:…”

“…The large semicircular arcs at high frequency represent the bulk or grain response. [17][18][19][20][21][22][23][24]31 A deviation from the semicircular shape of modulus arc of both samples has been observed with increasing temperature in high frequency region, and the semicircular arc for LCO sample has only formed at À100 and À80 C, though the semicircular arc for the Ir doped LCO sample has only formed at the other frequencies except 60, 80 and 100 C.…”

“…The long-range fundamental conductivity results in exact overlapping of the modulus and impedance peaks. [24][25][26][29][30][31][32][33][34] Especially, the investigation of electrical properties of these materials 27,28 can provide us an insight for their application in sensors, optical memory, electro-optic devices and actuations in the microelectromechanical systems etc.…”

High temperature oxidation kinetics of dysprosium particles

“…However, the demand for dysprosium has become more prevalent in other applications due to its many other interesting properties. For instance, dysprosium's isotopes strongly absorb neutrons which lead to its use in nuclear reactor control rod moderator materials [3,[5][6][7] and Dy 2 O 3 has been considered as a substitute for SiO 2 in high-k dielectric applications due to its large band gap (4.9 eV) and dielectric constant (14) [8,9]. Additionally, dysprosium mononitride (DyN) has been postulated as a suitable surrogate for americium mononitride (AmN) due to its similar physical and chemical attributes in studying its sintering and alloying effects in spent nuclear fuel reprocessing [10][11][12][13][14][15].…”