Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC:N:H Films

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

“…Lower film density enhances the free volume within the films, which is known to be an effective way of reducing dielectric constant of materials. Dielectric constant of a materials also reduces due to increased porosity owing to the presence of hydrogen content [31,32]. Higher C content and presence of hydrogen collectively contributed to lower dielectric values of the boron carbide films.…”

Comparison of characteristics and integration of copper diffusion-barrier dielectrics

“…Thus, this increases the effective k value of stack dielectric films, and limits the reduction of the RC delay in ultra large-scale integration [4,5]. As a result, amorphous silicon carbide (SiC), amorphous silicon nitricarbide (SiCN), and amorphous silicon oxycarbide (SiCO) deposited using a plasmaenhanced chemical vapor deposition (PECVD) system have received much attention for applications as Cu cap barrier and ESL in Cu damascene process [6][7][8][9]. The intrinsic properties of carbon-doped barrier films (SiCN and SiCO) have been extensively investigated by many researchers [10 -12].…”

X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces

“…In particular, new materials are needed with dielectric constants (k) less than those of the a-SiCN x :H (k = 5.0-5.7) materials currently utilized in low-k/Cu interconnects. 1 In this regard, plasma enhanced chemically vapor deposited (PECVD) BN is an intriguing material due to both it's reported low dielectric constant of 3.5-6.5 and high density of 1.8-2.0 g/cm. [2][3][4] Additional properties such as large band gap (> 5 eV), 2-4 high breakdown voltage 3,4 and low leakage currents 3,4 for PECVD BN make it an exciting material for low-k applications.…”