Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

Valdueza-Felip, S.; Mukhtarova, Anna; Qing, Pan; Altamura, Giovanni; Grenet, Louis; Durand, Christophe; Bougerol, Catherine; Peyrade, D.; Гонзалез-Посада, Ф.; Eymery, J.; Monroy, E.

doi:10.7567/jjap.52.08jh05

Cited by 24 publications

(19 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 3(a) shows the current density-voltage (J-V) and power density-voltage (P-V) characteristics, black line and red line respectively. From the figure, we can calculate the fill factor (FF) is 83%, higher than other reports [9,10] , the open circuit voltage (V oc ) is about 2.2eV, the short circuit current density is relatively low, about 0.43mA/cm 2 . Figure 3(b) shows the measured external quantum efficiency (EQE) and the PL spectra against the wavelength of the incident light for MQW InGaN/GaN solar cell.…”

Section: Experimental Methodsmentioning

confidence: 70%

The study of optical properties of InGaN-based solar cell with blue emission wavelength

et al. 2015

View full text Add to dashboard Cite

The III-N material system (including alloys of InN, AlN, and GaN) has several characteristics which give it key advantages over the existing solar cell materials, for example, the high absorption coefficient and high carrier mobility, more important, the wide range of band gap energies which spans nearly the entire solar spectrum. In this paper, we fabricated a multiple quantum well (MQW) InGaN/GaN solar cell. The photovoltaic characteristics of the device was demonstrated that, the short circuit current density (J SC ) is about 0.43mA/cm 2 , the open circuit voltage is about 2.2 eV, and the fill factor is about 81%. But the peak external quantum efficiency (EQE) is not very high, only 30%. And the conversion efficiency is about 0.83%, so more work for device design should be done in the future.

show abstract

Section: Experimental Methodsmentioning

confidence: 70%

The study of optical properties of InGaN-based solar cell with blue emission wavelength

et al. 2015

View full text Add to dashboard Cite

show abstract

“…30,34) Figure 9 shows the J SC dependence of the number of wells on a linear scale for the results in Refs. 30 and 34.…”

Section: Comparison With Experimental Datamentioning

confidence: 99%

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

Watanabe

Mitsuhara

Yokoyama

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-circuit current and the MQW structure. We previously reported that higher short-circuit current is obtained in solar cells with thinner GaN barrier layers, and in this investigation, we also obtained higher short-circuit current in solar cells with higher numbers of InGaN/GaN periodic layers. These results can be explained by the hypothesis that the transport characteristics of photoinduced carriers are characterized by the specific length within which carriers photoinduced in the InGaN well layer can move before recombination. The carrier collection efficiency is improved by the drift in the barrier layer due to the forward internal electric field and degraded by the carrier accumulation in the well layer caused by the inverse internal electric field and the potential barrier between layers, which well describes the influence of the MQW structure on the specific length. Using this model, we discuss how we can determine the MQW structure that yields higher short-circuit current, and conclude that the optimum thickness of the InGaN well layer is about 2-3 nm when the thickness of the GaN barrier layer is 3-8 nm.

show abstract

“…Here, the strong piezoelectric field in nitride crystals must be taken into consideration because it may affect the carrier transfer property by changing the energy band structures . Recently, several researchers have reported the effect of InGaN‐based MQW structures on solar cell properties . We have also reported that the external quantum efficiency (EQE) of InGaN/GaN MQW solar cells was maximized at a specific well thickness .…”

Section: Introductionmentioning

confidence: 99%

“…InGaN alloys have been attracting much attention as potential materials for solar cell devices, owing to their direct-transition and variable bandgaps, which can cover a large part of the solar spectrum. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Regarding the InGaN-based solar cells, many researchers have focused on multiple-quantum-well (MQW) structures that have a number of thin InGaN well layers inside. [6][7][8][9][10][11][12][13][14][15][16] This is because the MQW structures can pseudomorphically realize "thick InGaN layers" appropriate for the light absorption layers in solar cells with less difficulty during the material growth.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Miyoshi

Ohta

Mori

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

Two kinds of substrates, sapphire and AlN/sapphire template (AlN template), are used for the growth of InGaN/GaN multi‐quantum‐well solar cell structures by metalorganic chemical vapor deposition, and their material and device properties are investigated. The results show that the samples grown on AlN template have a better crystal quality with a larger in‐plane compressive strain than those on sapphire, and solar cells fabricated on sapphire mostly exhibit better performance than those on AlN template. An analysis of the photoluminescence measurements indicates that a critical InGaN well thickness related to the generation of nonradiative recombination centers, which affects the internal and external quantum efficiencies, is thinner in samples grown on AlN template than in samples on sapphire. The critical thickness is speculated to be related to the large in‐plane compressive strain in the samples on AlN template. By contrast, in comparison between samples with a sufficiently thin InGaN well thickness of 1.0 nm, the sample on AlN template exhibits better solar cell performance than on sapphire. This implies that the improved crystal quality contributes to the improvement of internal quantum efficiency as long as the well layer is thinner than the critical thickness.

show abstract

Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

Cited by 24 publications

References 16 publications

The study of optical properties of InGaN-based solar cell with blue emission wavelength

The study of optical properties of InGaN-based solar cell with blue emission wavelength

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Contact Info

Product

Resources

About