2019
DOI: 10.1016/j.nanoen.2019.05.050
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Photovoltaic-pyroelectric effect coupled broadband photodetector in self-powered ZnO/ZnTe core/shell nanorod arrays

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Cited by 117 publications
(59 citation statements)
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“…Along with the photogenerated charge carriers induced by photoelectricity, there are also extra pyroelectric polarization charges under illumination in some materials with inherent polarization, like ferroelectrics materials BiFeO 3 , [ 13 ] BaTiO 3 , [ 14,15 ] Pb(Zr,Ti)O 3 , [ 16 ] and pyroelectric material ZnO, [ 17–20 ] etc. Furthermore, the generated polarization charges can effectively modulate the behavior of photoinduced electrons, such as separation, transition, and recombination within heterojunctions.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Along with the photogenerated charge carriers induced by photoelectricity, there are also extra pyroelectric polarization charges under illumination in some materials with inherent polarization, like ferroelectrics materials BiFeO 3 , [ 13 ] BaTiO 3 , [ 14,15 ] Pb(Zr,Ti)O 3 , [ 16 ] and pyroelectric material ZnO, [ 17–20 ] etc. Furthermore, the generated polarization charges can effectively modulate the behavior of photoinduced electrons, such as separation, transition, and recombination within heterojunctions.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, the generated polarization charges can effectively modulate the behavior of photoinduced electrons, such as separation, transition, and recombination within heterojunctions. [ 21–27 ] For instance, by exploiting pyroelectric effect in ZnO/ZnTe, [ 18 ] ZnO/Si, [ 19 ] and ZnO/SnS [ 20 ] heterojunctions, the UV light‐induced pyroelectric potentials advantageously modulate the optoelectronic processes, and their detecting performances in terms of responsivity and response speed are strikingly enhanced at room temperature. Besides, the generation of pyroelectricity is strongly dependent on the temperature change rate.…”
Section: Introductionmentioning
confidence: 99%
“…The p–n heterojunction has a sufficient E b to move the photogenerated charge‐carriers across the junction. This is often observed at the interface of ZnO‐based [ 58–62 ] heterojunctions and transitional metal dichalcogenides heterojunctions. [ 63,64 ] When light shines on the PDs with a photon energy above the bandgap ( E g ) of the photosensitizers, the electron–hole pairs are generated in the n‐type semiconductor at the interface (Figure 2b) and then separated, easily, by the E b .…”
Section: Fundamentals Of Heterojunction Architectures For Self‐powered Photodetectorsmentioning
confidence: 99%
“…Reproduced with permission. [ 58 ] Copyright 2019, Elsevier. d) Morphology of a planar p‐CuZnS/n‐TiO 2 nanotubes PD.…”
Section: Structure Of Self‐powered Photodetectors/heterojunctionsmentioning
confidence: 99%
“…As an aggregative indicator to evaluate the performance of a photodetector, the normalized detectivity (D*) can be expressed by Eq. 4 [12]:…”
Section: Annealing Temperature Effect On Device Performancementioning
confidence: 99%