Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis

Aranovich, J.; Golmayo, D.; Fahrenbruch, Alan L.; Bube, Richard H.

doi:10.1063/1.328243

Cited by 274 publications

(86 citation statements)

References 11 publications

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“…The wide and direct optical energy band gap of 3.37 eV is large enough to transmit most of the useful solar radiation for ZnO. ZnO is an n-type semiconductor belonging to II -VI group which is very useful for transparent electrodes in flat panel displays, solar cells and a promising material for short wavelength light emitting devices [16][17][18]. Its epitaxial films and nanostructures have been mostly studied for the applications in UV-emitters, solar cells, gas sensors, varistors and surface electro-acoustic wave devices as given by Ozgur et al [19].…”

Section: Introductionmentioning

confidence: 99%

Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

Singh¹,

Vishwakarma²

2015

Materials Science-Poland

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In this work, zinc oxide (ZnO) nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP) at room temperature. X-ray diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM) images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 µm to 1.61 µm and the length is about 4.89 µm. It has also been observed that at room temperature ultraviolet visible (UV-Vis) absorption band is around 355 nm (blue shifted as compared to the bulk). The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

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Section: Introductionmentioning

confidence: 99%

Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

Singh¹,

Vishwakarma²

2015

Materials Science-Poland

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“…5. In this diagram, the electron affinity for ZnO ZnO is taken as 4.35 eV, 20 and the electron affinity of Al x Ga 1Ϫx N is assumed to be linearly dependent on x and to lie between 0.6 eV for AlN and 4.2 eV for GaN, 21,22 giving 3.9 eV for xϭ0.12. The bandgap energy of Al x Ga 1Ϫx N is also assumed to linearly depend on x and to lie in the range between 3.4 eV ͑GaN͒ and 6.2 eV ͑AlN͒, 23 leading to 3.64 eV for xϭ0.12.…”

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confidence: 99%

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Alivov

Kalinina

Cherenkov

et al. 2003

Applied Physics Letters

457

164

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We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I–V characteristics, with threshold voltage ∼3.2 V and low reverse leakage current ∼10−7 A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.

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“…While the valance band offset ( E V ) for holes is E V = Eg (ZnO) + E C − Eg (SiC) = 0.4 eV. E V has a higher value than E C , which means that electron injection from n-ZnO to p-SiC is larger than hole injection from p-SiC to n-ZnO [14,15].…”

Section: Methodsmentioning

confidence: 99%

Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC

Bano¹,

Hussain²,

Nur³

et al. 2009

Semicond. Sci. Technol.

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Abstract:High quality ZnO nanorods (NRs) were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates. Heterojunction light emitting diodes (LEDs) were fabricated. Electrical characterisation including deep level transient spectroscopy (DLTS) complemented by photolumincence (PL) are used to characterize the heterojunction LEDs. On contrary to previously published results on n-ZnO thin films on p-SiC, we found that the dominant emission is originating from the ZnO NRs. Three luminescence lines have been observed, these are associated with blue (465 nm) and violet (446 nm) emission lines from ZnO NRs emitted by direct transition/recombination of carriers from the conduction band to a zinc vacancy (V Zn ) radiative centre and from zinc interstitial (Zn i ) radiative center to the valance band. The third green-yellow (575 nm) spectral line is emitted due to a transition of carriers from Zn i to V Zn . The superposition of these lines led to the observation of strong white light which appears as a wide band in the room temperature PL.

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Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis

Cited by 274 publications

References 11 publications

Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC

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