Photovoltaic properties of ferroelectric BaTiO3 thin films rf sputter deposited on silicon

Dharmadhikari, Vineet S.; Grannemann, W. W.

doi:10.1063/1.330456

Cited by 99 publications

(25 citation statements)

References 35 publications

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“…Similar results were later reported on studies of BaTiO 3 ferroelectric crystals. 121 More recently, open circuit photo-voltage of 7 V was reported in PZT thin films doped with La. 122 Other studies on nano-structured PZT films doped with La reported unprecedented efficiencies of 0.28% in the bulk photovoltaic effect.…”

Section: Photovoltaic Multiferroic Solar Cellsmentioning

confidence: 98%

Fundamentals of Multiferroic Materials and Their Possible Applications

Vopson

2015

Critical Reviews in Solid State and Materials Sciences

476

203

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Materials science is recognized as one of the main factors driving development and economic growth. Since the silicon industrial revolution of the 1950s, research and developments in materials and solid state science have radically impacted and transformed our society by enabling the emergence of the computer technologies, wireless communications, Internet, digital data storage, and widespread consumer electronics. Today's emergent topics in solid state physics, such as nano-materials, graphene and carbon nano-tubes, smart and advanced functional materials, spintronic materials, bio-materials, and multiferroic materials, promise to deliver a new wave of technological advances and economic impact, comparable to the silicon industrial revolution of the 1950s. The surge of interest in multiferroic materials over the past 15 years has been driven by their fascinating physical properties and huge potential for technological applications. This article addresses some of the fundamental aspects of solid-state multiferroic materials, followed by the detailed presentation of the latest and most interesting proposed applications of these multifunctional solid-state compounds. The applications presented here are critically discussed in the context of the state-of-the-art and current scientific challenges. They are highly interdisciplinary covering a wide range of topics and technologies including sensors, microwave devices, energy harvesting, photo-voltaic technologies, solid-state refrigeration, data storage recording technologies, and random access multi-state memories. According to their potential and expected impact, it is estimated that multiferroic technologies could soon reach multibillion US dollar market value.

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Section: Photovoltaic Multiferroic Solar Cellsmentioning

confidence: 98%

Fundamentals of Multiferroic Materials and Their Possible Applications

Vopson

2015

Critical Reviews in Solid State and Materials Sciences

476

203

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“…[7] Several methods, including sol-gel, sputtering, and CVD, have been proposed for the preparation of TiO 2 thin films. [8][9][10] Among these methods, metal-organic (MO)CVD has received considerable attention because it provides good step coverage, film uniformity, and high deposition rates. [10] Atomic layer deposition (ALD), which provides excellent uniformity over a large area and conformal coverage of high aspect ratio structures, owing to surface saturation reactions, has recently been used for the deposition of TiO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Monitoring of an Interlayer Between Si(100) and a TiO2 Layer Formed During Cyclic CVD

Cho

Heo

Kim

et al. 2006

Chem. Vap. Deposition

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The growth of an interlayer between TiO 2 and Si(100) during the cyclic CVD of TiO 2 is investigated using X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interlayer, the thickness of which was estimated to be 21 Å at 300°C and 26 Å at 400°C, can be divided into two distinct regions, i.e., an SiO x layer, which grows during the initial four deposition cycles, and TiSiO x, which grows in the subsequent four and ten deposition cycles. A TiO 2 layer then grows during the following deposition cycles (> 10 cycles), but a sharp boundary is observed between TiO 2 and the interlayer. Based on the HRTEM images, the two layers are seen to be distinct and not mixed. SiO x , which is formed on Si(100) during the initial four deposition cycles, promotes the decomposition of the Ti precursor, so the Ti concentration in the interlayer that is formed after the initial four cycles increases at a higher rate than that in the layer formed during the initial cycles. In this study, the thickness of the interlayer could be kept to less than 14 Å by reducing the amounts of O 2 used in each cycle.

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“…Ferroelectric BaTiO 3 thin films have gained much attention due to their applications as the integral fulfilled capacitors [1], which are perspective for creating of ferroelectric random access memories (FRAM) and paraelectric dynamic random access memories (DRAM) memories with high density, as well as for utilizing in highspeeding microprocessors and communication systems. Several types of devices have been constructed based on barium titanate thin films, which include phase shifters, parametric amplifiers, and delay lines for microwave regions [2], photovoltaic devices [3], humidity and gas sensors [4] and ferroelectric transistors.…”

Section: Introductionmentioning

confidence: 99%