Photovoltaic power for Space Station Freedom

Baraona, C. R.

doi:10.1109/pvsc.1990.111586

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Use of anisotropic etching to produce a geometrically structured surface (7) has become increasingly important in raising the efficiency of silicon solar cells (8). Benefits of surface structure produced by anisotropic etching include reduced reflectance, oblique passage of light through the cell, and light trapping.…”

Section: Applicationsmentioning

confidence: 99%

Effect of Crystal Orientation on Anisotropic Etching and MOCVD Growth of Grooves on GaAs

Bailey

Landis²,

Wilt³

1989

J. Electrochem. Soc.

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Grooves can be formed on normalGaAs by wet‐chemical anisotropic etching of surfaces masked by photoresist stripes. The effect of crystal orientation on the shape of the grooves etched and on subsequent epitaxial growth by MOCVD is presented. The polar lattice increases the complexity of the etching and growth processes. The slow‐etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher order planes.

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Section: Applicationsmentioning

confidence: 99%

Effect of Crystal Orientation on Anisotropic Etching and MOCVD Growth of Grooves on GaAs

Bailey

Landis²,

Wilt³

1989

J. Electrochem. Soc.

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“…Reflection losses well below this value can be obtained by (i) surface texturing, (if) antireflection coating with interference-thickness films, and (iii) optical index matching. Surface texturing is normally achieved for (100) oriented silicon wafers by treatment in hot caustic (10). Such treatment can reduce the reflection loss to a few percent, but has the disadvantage that not all crystal orientations are suitable.…”

Section: Cell Thickness In Inchesmentioning

confidence: 99%

Practical Limiting Efficiencies for Crystalline Silicon Solar Cells

Amick

Ghosh

1983

J. Electrochem. Soc.

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A review is given of the factors governing the conversion efficiency for crystalline silicon solar cells at AM1 and of the practical limits on cell efficiencies. Included are losses due to reflection, shadowing, carrier diffusion length, and I2R dissipation. The influence of polycrystalline grain size on conversion efficiency is also discussed. For conventional cells having a planar junction, a practical limiting efficiency in production appears to be about 17% in the absence of sunlight concentration.* Electrochemical Society Active Member. 1 A more detailed treatment will be found in "

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“…In this method, a reflectance of about 5% is achieved. [6][7][8][9][10] Therefore, the use of pyramidal structures alone cannot reach the limit of reflectivity of less than 5%. 11,12) In recent years, there have been hundreds of research studies of the structure formation in nanosized solar cell surface texturing.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Silicon Pyramid-Nanocolumn Structures with Lowest Reflectance by Reactive Ion Etching Method

Kong

Pyo

et al. 2013

Jpn. J. Appl. Phys.

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We have developed nanosized structures on a silicon surface by the reactive ion etching method. The purpose of this work is to fabricate pyramid-nanocolumn structures for crystalline silicon solar cells using a reactive ion etching (RIE) system with a metal mesh and to simulate surface texturing structures using the PC1D program. The reflectance of the structures was lower than that of only-pyramid or only-nanocolumn structure arrays. We formed micropyramids by general anisotropic saw damage removal (SDR) etching using potassium hydroxide (KOH) solution, as well as nanocolumn structures by RIE with a metal mesh and SF6/O2 gas (35/30 sccm). We studied the fundamentals and morphologies of structures (micropyramids, nanocolumn structures, and pyramid-nanocolumn structures). Owing to anisotropic SDR etching in KOH solution for a single-crystalline silicon wafer, the whole wafer surface is covered with pyramid structures with a size range of 1–5 µm. After RIE texturing, nanocolumn structures with a size range of 20–50 nm were formed on the pyramid structures. Owing to binary surface texturing with pyramid and nanocolumn structures, spectra with weighted average reflectances below 3% in the wavelength range from 350 to 1100 nm were obtained under optimized condition. In particular, the average reflectance was 1.16% in the wavelength range of 400 to 1000 nm without an antireflection coating (ARC). The combination of the pyramid and nanostructures has a very low reflectance. Therefore, ARC is not required in the solar cell process in the case of using pyramid-nanocolumn structures.

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Photovoltaic power for Space Station Freedom

Cited by 5 publications

References 5 publications

Effect of Crystal Orientation on Anisotropic Etching and MOCVD Growth of Grooves on GaAs

Effect of Crystal Orientation on Anisotropic Etching and MOCVD Growth of Grooves on GaAs

Practical Limiting Efficiencies for Crystalline Silicon Solar Cells

Fabrication of Silicon Pyramid-Nanocolumn Structures with Lowest Reflectance by Reactive Ion Etching Method

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