Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrays

Kartopu, Giray; Türkay, Deniz; Özcan, Can; Hadibrata, Wisnu; Aurang, Pantea; Yerci, Selçuk; Ünalan, Hüsnü Emrah; Barrioz, Vincent; Qu, Yongtao; Bowen, Leon; Gürlek, A.K.; Maiello, Pietro; Turan, Raşit; Irvine, S.J.C.

doi:10.1016/j.solmat.2017.11.036

Cited by 55 publications

(23 citation statements)

References 21 publications

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“…They inserted a thin CdS interlayer shell to provide more effective passivation to the ZnO surface and improved the PCE to 4% [202]. A similar discovery was also reported by Kartopu et al [203]. These reports show the influence of surface states and the importance of surface passivation.…”

Section: Challenges In Making Nw Solar Cellssupporting

confidence: 63%

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Zhang

Liu

2019

Crystals

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Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

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Section: Challenges In Making Nw Solar Cellssupporting

confidence: 63%

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Zhang

Liu

2019

Crystals

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“…Utilizing double buffer layer device structure, the junction quality of CdTe solar cells was pronouncedly improved . Aiming for the ETL/absorber interface improvement, we modified our device structure by adding another buffer layer of ZnO between FTO and CdS layer.…”

Section: Resultsmentioning

confidence: 99%

“…Utilizing thicker ETL film would sacrifice short light absorption, while too thin CdS thickness may lead to short‐circuiting between rough FTO and absorber layer . To consider the benefits of CdS ETL and reduce the CdS thickness, it can be modified with an additional pre‐layer as used in CdTe solar cells . On the other hand, the FTO surface is highly rough which affected the physical contact between FTO and ETL .…”

Section: Introductionmentioning

confidence: 99%

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

et al. 2018

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Sb2(SexS1–x)3 has been proven a very promising light absorbing material for photovoltaic applications due to its high stability, tunable band gap, non‐toxic element, and high extinction coefficient. For Sb2(SexS1–x)3 alloy film deposition, the authors develop a single source based rapid‐thermal‐evaporation (RTE) method instead of the traditional in‐situ sulfurization or double source co‐evaporation based RTE method. The absorber band gap can be precisely tuned from 1.1 to 1.7 eV by simply varying the molar ratio of Sb2Se3 and Sb2S3 source powder. From the systematical composition screening, FTO/CdS/Sb2(Se0.68S0.32)3/Au devices show higher power conversion efficiency (PCE ∼ 4.17%) when compared with other absorber compositions based devices. In order to achieve thinner ETL layers and simultaneously avoid pinholes led by rough FTO surface, we introduce for the first time double buffer layer in the Sb2(Se0.68S0.32)3 device system which could further improve the device efficiency from 4.17% to 5.73%. The double buffer layer ZnO/CdS helped to form graded energy band alignment, suppress charge recombination and efficiently extract electrons. The devices obtained higher Jsc and Voc supported by various physical characterization analyses. The facile single source deposition method, efficient double buffer layer device structure and notable PCE are expected to pronouncedly promote antimony chalcogenide device development.

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“…SCAPS-1D is used for electrical simulations [20], and generation profiles are imported from optical simulations. Simulation parameters of solar cells used in SCAPS-1D are taken from the literature [21][22][23] and presented in Table S1. The four-terminal design (4T) is assumed for the tandem solar cell, whereby C 1−x Z x T and IBC c-Si are used as top and rear solar cells, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…The spatial photoelectron generation profile is simulated optically, which is then imported to the electrical simulations. To present practical devices with a polycrystalline absorber, defect mechanisms are introduced in electrical simulations, such as surface and bulk recombination in the top cell absorber and transport layers (a lifetime of 10 ns is assumed for MZO and CdS), in agreement with experimental results [21][22][23]. The minority carrier lifetime is assumed to be 5 ns in top cell absorbers, and surface recombination velocity at the ETL/top cell absorber interface is taken as 500 cm/s.…”

Section: Electrical Simulationsmentioning

confidence: 99%

Combined Optical-Electrical Optimization of Cd1−xZnxTe/Silicon Tandem Solar Cells

2020

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Although the fundamental limits have been established for the single junction solar cells, tandem configurations are one of the promising approaches to surpass these limits. One of the candidates for the top cell absorber is CdTe, as the CdTe photovoltaic technology has significant advantages: stability, high performance, and relatively inexpensive. In addition, it is possible to tune the CdTe bandgap by introducing, for example, Zn into the composition, forming Cd1−xZnxTe alloys, which can fulfill the Shockley–Queisser limit design criteria for tandem devices. The interdigitated back contact (IBC) silicon solar cells presented record high efficiencies recently, making them an attractive candidate for the rear cell. In this work, we present a combined optical and electrical optimization of Cd1−xZnxTe/IBC Si tandem configurations. Optical and electrical loss mechanisms are addressed, and individual layers are optimized. Alternative electron transport layers and transparent conductive electrodes are discussed for maximizing the top cell and tandem efficiency.

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Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrays

Cited by 55 publications

References 21 publications

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

Combined Optical-Electrical Optimization of Cd1−xZnxTe/Silicon Tandem Solar Cells

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Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrays

Cited by 55 publications

References 21 publications

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

Combined Optical-Electrical Optimization of Cd1−xZnxTe/Silicon Tandem Solar Cells

Contact Info

Product

Resources

About

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation