Photovoltaic performance of a Cd 1−x Mg x Te/CdS top-cell structure

Martínez, Omar S.; Regalado-Pérez, E.; Ramírez-Morales, E.; Reyes-Coronado, David; Galvez, Geovanni Hernández; Mathew, Xavier

doi:10.1016/j.tsf.2014.10.082

Cited by 6 publications

(4 citation statements)

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“…For two-junction solar cells, numerical calculations indicate a band gap of 1.72 eV is optimal for the top cell [14] connected in series. The band gap of the ternary alloys of CdTe can be tuned by controlling the quantity of element X (Zn, Mg or Mn) in a Cd(1-x) Xx Te alloy [15]- [18].…”

Section: Introductionmentioning

confidence: 99%

“…Devices fabricated from an as-deposited CdTe alloy on a selective window layer, such as a thin film of CdS, without any CdCl2 treatment display poor device performance [15], [18], [19]. Researchers have used the CdCl2 activation treatment on CdTe alloys and the studies report limited success in retaining the original composition of the CdTe alloy [15], [20] [21] [22]. A major hurdle in the fabrication of high band gap solar cells using CdTe alloys has been reducing the loss of the alloying elements from the ternary compound during the CdCl2 treatment.…”

Section: Introductionmentioning

confidence: 99%

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CdS barrier to minimize Zn loss during CdCl2 treatment of Cd-Zn-Te absorbers

et al. 2018

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A major challenge in the fabrication of high band gap II-VI polycrystalline solar cells is to preserve the original composition of the absorber after the CdCl2 activation treatment. In this study, a method is demonstrated to maintain the Cd-Zn-Te alloy absorber composition during its exposure to the CdCl2 treatment. A thin film of CdS was applied as a barrier on the back surface of the high band gap polycrystalline Cd(1-x)ZnxTe (x = 20% by atomic ratio, corresponding band gap 1.72 eV) before the CdCl2 treatment. Using transmission electron microscopy and energy dispersive spectroscopy, it was observed that the composition of Cd-Zn-Te was maintained after the CdCl2 treatment. The devices fabricated after removing the thin film of CdS, exhibited diode-like behavior. A significant increase in the quantum efficiency near the short wavelength region was observed, and the band gap of Cd(1-x)ZnxTe was maintained. Index Terms-High band gap II-VI solar cells, tandem solar cells, cadmium chloride treatment on Cd-Zn-Te and Co-sublimation of Cd-Zn-Te, CdTe alloys, top cell in multi-junction solar cell

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

CdS barrier to minimize Zn loss during CdCl2 treatment of Cd-Zn-Te absorbers

et al. 2018

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“…CdTe is an important II-VI semiconductor, which can be successfully synthesized by aqueous chemical methods and permits easy incorporation of elements Electronic supplementary material The online version of this article (doi:10.1007/s00604-017-2165-8) contains supplementary material, which is available to authorized users. such as Zn, Mn and Mg in the lattice to formation of alloys [9]. Among the elements listed, Mg can be considered particularly convenient since the band gap of MgTe is significantly wider than that of CdTe, so the introduction of a small concentration would lead to a sensitive increase in band gap energy.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the reports on the CdTe-MgTe system are related to thin films prepared by molecular beam epitaxy [11] and coevaporation [9]. Bulk Cd 1-x Mg x Te monoliths have also been prepared by zone melting in a vertical three-heat-zone tubular furnace [12] and, in the case of Mg x Cd 1-x Se, bulk single crystals were grown in quartz tubes by chemical transport reaction technique by time-varying temperature profile [13].…”

Section: Introductionmentioning

confidence: 99%

Cd1-xMgxTe semiconductor nanocrystal alloys: Synthesis, preparation of nanocomposites with graphene-based materials, and electrochemical detection of lidocaine and epinephrine

et al. 2017

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This work describes the synthesis of a glutathione-capped Cd 1-x Mg x Te semiconductor nanocrystal alloy in aqueous solution. The effects of reaction time and Cd:Mg molar proportion on the spectroscopic and electrochemical properties were optimized. The Cd 1-x Mg x Te material was found to emit in the visible range (blueishgreen to dark pink), with the band gap energy depending both on the Mg:Cd ratio and of the nanocrystal size. The insitu growth of the nanocrystal alloy on both graphene oxide and reduced graphene oxide leads to partial quenching of the photoluminescence of Cd 1-x Mg x Te but improves the electrochemical response of the nanocrystals. Carbon paste electrodes (CPE) were modified with the graphene-based materials containing semiconductor nanocrystals, and it is shown that such a modified CPE can be applied to the determination of the local anesthetic lidocaine and the anaphylactic drug epinephrine via differential pulse voltammetry. Each analyte can be determined both individually and in the presence of constant concentrations of the other, best at typical oxidation potentials of 0.25 V and 1.0 V (vs. Ag/ AgCl), respectively. In the best cases, the detection limits are 92 nM for lidocaine and 0.95 μM for epinephrine.

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