Photovoltaic, I-V and C-V Characteristics of SnO₂/SiO₂/a-Si:H/mc-Si:H Structures

Abstract

Structures of the type SnO2/SiO2/a-Si:H/mc-Si:H/Al and SnO2/SiO2/a-Si:H/mc-Si:H/a-Si:H/mc-Si:H/ were fabricated and studied for their I-V, C-V and photovoltaic characteristics. Results indicate that the structures behave like two diodes formed in the back-to-bak geometry. Furthermore, from the I-V studies under illumination, it is observed that a sufficient drift field exists in the structure without intentional doping of Si-based layers to yield a gain in current under illumination of about 104.

The effect of Zn concentration on some physical properties of tin oxide films obtained by ultrasonic spray pyrolysis

“…SnO 2 is an n-type semiconductor which has many applications. SnO 2 thin films are widely used in practice as transparent conducting films in the field of photothermal and photovoltaic conversions [10][11][12][13]. Other than the high transparency and high conduction, the advantage of SnO 2 films is high chemical stability even at high temperatures; they also have the refractive index in the range 1.9-2, making them suitable for antireflection coating [14].…”