2013
DOI: 10.1364/oe.22.000a13
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Photovoltaic electrical properties of aqueous grown ZnO antireflective nanostructure on Cu(In,Ga)Se_2 thin film solar cells

Abstract: A solution-grown subwavelength antireflection coating has been investigated for enhancing the photovoltaic efficiency of thin film solar cells. The 100-nm-height ZnO nanorods coating benefited the photocurrent of Cu(In,Ga)Se2 solar cells from 31.7 to 34.5 mA/cm2 via the decrease of surface light reflectance from 14.5% to 7.0%, contributed by the gradual refractive index profile between air and AZO window layer. The further reduction of surface reflectance to 2.3% in the case of 540-nm-height nanorods, yet, low… Show more

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Cited by 11 publications
(2 citation statements)
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“…49 or Cu 2 ZnSnS 4 solar cells, all of which exhibit the efficient AR performance, thus largely enhance the short-circuit current density. [51][52][53][54] ZnO nanostructured arrays are also used to construct hierarchical structures combined with other materials because of the facile fabrication of ZnO NSAs on arbitrary substrates. Notably, Qi et al adopted silicon micro-pyramids, which were prepared by photolithography followed by anisotropic etching process in KOH solution, as the starting substrate for the hydrothermal growth of ZnO nanorods (Fig.…”
Section: Metal Oxide Basedmentioning
confidence: 99%
“…49 or Cu 2 ZnSnS 4 solar cells, all of which exhibit the efficient AR performance, thus largely enhance the short-circuit current density. [51][52][53][54] ZnO nanostructured arrays are also used to construct hierarchical structures combined with other materials because of the facile fabrication of ZnO NSAs on arbitrary substrates. Notably, Qi et al adopted silicon micro-pyramids, which were prepared by photolithography followed by anisotropic etching process in KOH solution, as the starting substrate for the hydrothermal growth of ZnO nanorods (Fig.…”
Section: Metal Oxide Basedmentioning
confidence: 99%
“…In the first step, bilayered metallic CuInGa precursors of $0.6 lm were prepared using two ternary CuInGa alloys targets in a sputtering system. 12 A conventional CuInGa layer of Ga/(In þ Ga) ratio $ 0.28 (520 nm in thickness) was deposited on the Mocoated SLG substrates, and subsequently covered by an ultra-thin precursor layer of Ga/(In þ Ga) ratio $ 0.60 (80 nm in thickness). The atomic compositions of bi-layered CuInGa precursors were confirmed to be the ratios of Cu/ (In þ Ga) $ 0.87 and Ga/(In þ Ga) $ 0.31, respectively.…”
mentioning
confidence: 99%