Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers

Chang, Moo Been; Chen, C. Y.; Pan, Fu‐Ming; Lai, Jinn-Horng; Wan, W. W.; Liang, Jenq–Horng

doi:10.1063/1.1581987

Cited by 23 publications

(14 citation statements)

References 15 publications

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“…Indeed, when the laser was turned off using the "dark lift" mode, we did not observe any measureable affect on the SCM images, which is different from the literature 10,11 and is likely a result of a different sample setup. Intentionally connecting the contacts of a live device so that every local area of the front and back contacts are shorted could result in a different sample condition from an unintentionally, and unevenly, shorted device.…”

Section: Methodscontrasting

confidence: 50%

Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells

Jiang

Heath

Moutinho

et al. 2011

Journal of Applied Physics

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Modeling of silicon nanocrystals based down-shifter for enhanced silicon solar cell performance J. Appl. Phys. 111, 034303 (2012) Analytical solution for the photocurrent of solar cells with internal reflection J. Appl. Phys. 111, 034502 (2012) On the design and applicability of nanowire solar cells using low-grade semiconductors J. Appl. Phys. 111, 034501 (2012) Fundamental limits in the external quantum efficiency of single nanowire solar cells Appl. Phys. Lett. 99, 263102 (2011) A semi-analytical model for semiconductor solar cells J. Appl. Phys. 110, 123104 (2011) Additional information on J. Appl. Phys. We report on a scanning capacitance spectroscopy (SCS) study on the n þ -p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of $10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with $10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in the literature. These distinctive spectra are due to uneven carrier-flow from both the n-and p-sides. Our results contribute significantly to the SCS study on asymmetrical junctions.

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Section: Methodscontrasting

confidence: 50%

Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells

Jiang

Heath

Moutinho

et al. 2011

Journal of Applied Physics

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“…The measurement also shows a photovoltaic effect, evident in Fig. 9c where a short circuit current and an open circuit voltage can be observed, obtained by the contribution from the scattered light of the laser properly focused on the side of the AFM cantilever rear [36,37].…”

Section: Tuning the Dopant Distribution Propertiesmentioning

confidence: 76%

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Puglisi

Caccamo

D’Urso

et al. 2015

Phys. Status Solidi A

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Semiconductor doping through solution-based self-assembling provides a simple, scalable, and cost-effective alternative to standard methods and additionally allows conformality on structured surfaces. Among the several solution-based deposition techniques, dip coating is the most promising. It consists in immersing the target to be doped inside a solution containing the dopant precursor. During this process, the molecule bonds to the target surface with a self-limiting process ruled by its steric properties. Successive annealing leads to layer decomposition and diffusion of dopant atoms inside the substrate. Most of the work on molecular doping lacks information on the molecule/Si interface chemical properties, on the mechanisms of the molecule evolution during the coating, and of its decomposition after the diffusion step. Moreover, it has so far been devoted to the molecules design to tune the final dopant dose and distribution. Here, the main results on the molecular doping are reviewed, and new findings on the interface characteristics, also in terms of monoand multilayers formation are presented. A systematic study, carried out by fixing the dopant precursor and varying the coating conditions, is also reported, demonstrating that the important doping features can be controlled precisely and that uniformity can be achieved at nanometer level.

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“…15 In 2003, Chang et al revealed that the laser beam in an atomic force microscope (AFM) may induce a photovoltaic effect on the SCM images, highlighting the influence of the SCM setup on the observation of EJ regions. 16,17 The SCS investigations by Buh et al indicated that both the AFM laser beam and the modulation voltage (MV) may distort SCS profiles of a metal-oxide-semiconductor (MOS) capacitor. 18 Moreover, the humidity-induced hysteretic behavior of SCS was studied, exploring the importance of environmental control for SCM measurements.…”

mentioning

confidence: 99%

“…According to prior reports, the commonly used peak-to-peak MV may range from 0.3 V to 5 V for the acquisition of SCM images of EJ regions. 5,6,11,16,17,20,21 However, a higher MV means that dC/dV signals are carried out from an extensively modulated area. This fact may perturb the SCM observation on EJ regions.…”

mentioning

confidence: 99%

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Chang¹,

Hu²,

Chou³

et al. 2012

Appl. Phys. Lett.

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With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions

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Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers

Cited by 23 publications

References 15 publications

Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells

Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

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