Photovoltaic effect in a-Si:H/n-InSe heterostructures

Bekimbetov, R. N.; Nikolaev, Yu. A.; Rud, V. Yu.; Rud, Yu. V.; Terukov, E. I.

doi:10.1134/1.1309424

Cited by 4 publications

(3 citation statements)

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“…InSe, GaSe layered crystals serve as examples of semiconductor substrates with the strongly anisotropic properties. They are used in many heterostructures due to the possibility of making the high-quality substrates by cleaving the crystal [3]. The Іn 2 O 3 -ІnSe structure is one of these heterostructures in which the oxide film is obtained by thermal oxidation of ІnSe [4].…”

Section: Introductionmentioning

confidence: 99%

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

Katerynchuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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The photosensitive In 2 O 3 -p-InSe heterostructures, in which the In 2 O 3 frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially dependent on surface topology of oxide. The obtained results indicate that In 2 O 3 oxide is not only an active component of the structure but also acts as a diffraction cell element. Oxide surface topology was investigated using the atomic-force microscope technique. Under different conditions of InSe oxidation, the sample surfaces contained nanoformations preferably in the form of nano-islands. Their location acquired both disordered and ordered characters. A dimensional optical effect in the oxide layer was found to be due to the anisotropic light absorption in InSe. The higher deviation of incident light from its normal direction due to a nanostructured surface is, the higher variation in generation of carriers in this semiconductor is. These changes consist in the energy broadening of the heterostructure photoresponse spectrum as well as in peculiarities of the excitonic line. The higher density and ordering of the nanoneedles on the oxide surface is, the higher long-wave shift and more intense excitonic peak in spectrum takes place.

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Section: Introductionmentioning

confidence: 99%

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

Katerynchuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…electro-photographic films, switches, optical filters, photodetectors, magnetic field control lasers, light modulators, optoelectronics, and Schottky diodes). [14][15][16][17][18] The type I-III-VI ternary semiconductors Cu-In 5 S 8 and AgIn 5 S 8 are also of great technological and scien- tific interest because of their possible application in semiconductor devices and optical and quantum electronics. [19] Both M II In 2 S 4 and M I In 5 S 8 show n-type conductivity and crystallize in the spinel-type cubic structure with the space group Fd3 ¯m.…”

Section: Introductionmentioning

confidence: 99%

A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres

Lei

Tang

et al. 2006

Eur J Inorg Chem

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A facile, self‐sacrificing template route has been developed to synthesize spinel MIIIn2S4 (MII = Mn, Zn, Cd, Fe, Co, Ni) and MIIn5S8 (MI = Cu, Ag) porous microspheres. The BET surface areas of the products are around 70 m2 g–1. The urchin‐like In2.77S4 microspheres precursor acts as both starting material and template to confine the growth of the final products. The phase structures and morphologies of the products were characterized by X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron diffraction. Possible formation process and growth mechanism for the porous structure are proposed based on the experimental results. (© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2006)

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“…Various ternary and quaternary semiconducting compounds based on A II electro-photographic films, switches, optical filter, photodetectors, magnetic field control lasers, light modulators and other devices like optoelectronic and Schottky diodes [1][2][3][4][5]. Most promising among them is n-type ternary manganese indium sulphide (MnIn 2 S 4 ), which is a magnetic semiconductor, having a cubic spinel structure and belonging to space group Fd3m.…”

Section: Introductionmentioning

confidence: 99%

Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Sharma

Rastogi

Kohli

et al. 2004

Physica B: Condensed Matter

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Photovoltaic effect in a-Si:H/n-InSe heterostructures

Cited by 4 publications

References 1 publication

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres

Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

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Photovoltaic effect in a-Si:H/n-InSe heterostructures

Cited by 4 publications

References 1 publication

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide

A Self‐Sacrificing Template Route to Spinel MIIIn2S4 (MII = Mn, Zn, Cd, Fe, Co, Ni) and MIIn5S8 (MI = Cu, Ag) Porous Microspheres

Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

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Product

Resources

About

A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres