Photovoltaic effect and optical absorption in MoS2

Fortin, E.; Sears, W.M.

doi:10.1016/0022-3697(82)90037-3

Cited by 133 publications

(85 citation statements)

References 16 publications

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“…These values are in general agreement with previous reports based on bulk 39 and on transition metal dichalcogenides single-atomic layers. 17,40 Nevertheless, when a MoSe 2 crystal composed of ~10 atomic layers is transferred onto a flat h-BN crystal, itself placed on a pair of lateral back-gates to create an electrostatic PN-junction, one observes photovoltaic efficiencies surpassing 14%…”

supporting

confidence: 93%

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions

et al. 2015

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ABSTRACT:Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s)can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately ten atomic-layers of MoSe 2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14 %, with fill-factors of ~ 70 %. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the

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supporting

confidence: 93%

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions

et al. 2015

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“…The calculated efficiency values of a few tenths of a percent, shown in Fig. 4, are lower than the observed photogeneration power conversion efficiency at Schottky junctions in bulk MoS2, which are 1-2.5% [35], [39]. A reason for the low conversion efficiencies in our devices could be the fact that compared to these reports, in our devices there is an additional built-in field due to the carrier density gradient, the photocurrent due to which may oppose that due to the Schottky junctions.…”

mentioning

confidence: 56%

Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films

Sutar¹,

Agnihotri²,

Comfort³

et al. 2014

Applied Physics Letters

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Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction. Two-dimensional (2-D) crystalline materials have attracted a significant amount of research efforts since the isolation of graphene by micromechanical exfoliation [1,2,3,4]. They show promise in novel electronic and optoelectronic applications, where the low-dimensionality provides ideal electrostatic control for field-effect transistor devices, or large area-to-volume ratio for sensors and photoelectric devices. Among 2-D crystals, MoS2, a transition metal dichalcogenide (TMDC), has received particular attention as channel material for thin-film or flexible electronics [5,6,7] because its mobility is considerably higher than amorphous or polycrystalline materials, and because it can be used in various heterostructures to enable diverse electronic applications [8,9,10,11,12].The most remarkable attributes of MoS2 lie in its bandstructure, which shows a crossover from an indirect bandgap (~1.3 eV) in bulk to a direct one (~1.9 eV) for a monolayer [13,14]. In the monolayer form, MoS2 has been used in optoelectronics [15,16,17], and has been investigated to enable a new class

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“…In case of 2D materials not only the "semiconductivity" property but also other properties such as enhanced catalytic properties, high surface area, active sites and reactivity plays important role for its sensing performance. Many 2D layered inorganic materials have now been developed, including MoS 2 , WS 2 , WSe 2 , GaS, GaSe 2 , atomically thin layers 85,86 . Other layered metal chalcogenides like WS 2 and SnS 2 have also been studied for gas sensor application 87,88 .…”

Section: Current Statusmentioning

confidence: 99%

Recent developments in 2D layered inorganic nanomaterials for sensing

et al. 2015

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Two dimensional layered inorganic nanomaterials (2D-LINs) have recently attracted huge interest because of their unique thickness dependent physical and chemical properties and potential technological applications. The properties of these layered materials can be tuned via both physical and chemical processes. Some 2D layered inorganic nanomaterials like MoS2, WS2 and SnS2 have been recently developed and employed in various applications, including new sensors because of their layer-dependent electrical properties. This article presents a comprehensive overview of recent developments in the application of 2D layered inorganic nanomaterials as sensors. Some of the salient features of 2D materials for different sensing applications are discussed, including gas sensing, electrochemical sensing, SERS and biosensing, SERS sensing and photodetection. The working principles of the sensors are also discussed together with examples.

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Photovoltaic effect and optical absorption in MoS2

Cited by 133 publications

References 16 publications

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions

Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films

Recent developments in 2D layered inorganic nanomaterials for sensing

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