Photovoltaic Characterization of Si and SiGe Surfaces Sonochemically Treated in Dichloromethane

Shmid, V.; Podolian, A.; Nadtochiy, Andriy; Yazykov, D.; Semen’ko, M. P.; Korotchenkov, О. A.

doi:10.21272/jnep.12(1).01023

Cited by 2 publications

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“…With respect to the reactant solutions that can be used, recent investigations report that SPV signal in Si can be significantly enhanced, by almost an order of magnitude, due to ultrasonic treatments in dichloromethane. Similar effect in CH 2 Cl 2 can be observed for Ge x Si 1-x surfaces exhibiting a 50% increase in the SPV amplitude [74].…”

Section: Sonochemical Passivation Of Si and Sigesupporting

confidence: 77%

Ultrasonic Processing of Si and SiGe for Photovoltaic Applications

Nadtochiy¹,

Podolian²,

Korotchenkov³

et al. 2021

Solar Cells - Theory, Materials and Recent Advances

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The usage of power ultrasound for sonochemical processing of Si wafers and thin layers of amorphous Si and SiGe alloys is described. Over the last decade different industries have become increasingly drawn to sonochemistry because it provides a green and clean alternative to conventional technologies, particular in the areas of processing of silicon-based materials for photovoltaic applications. Two techniques related to ultrasonic cleaning of Si wafers and sonochemical modification of Si, SiGe and a-Si/SiGe surfaces in hydrocarbon solutions of chloroform (CHCl3) and dichloromethane (CH2Cl2) are discussed. The occurrence of cavitation and bubble implosion is an indispensable prerequisite for ultrasonic cleaning and surface processing as it is known today. The use of higher ultrasonic frequencies to expand the range of ultrasonic cleaning and processing capabilities is emphasized. Although exact mechanisms of an improved photoelectric behavior of Si-based structures subjected to power ultrasound are not yet clarified in many cases, the likely scenarios behind the observed photovoltaic performances of Si, SiGe and a-Si/SiGe surfaces are proposed to involve the surface chemistry of oxygen and hydrogen molecules as well hydrocarbon chains.

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Section: Sonochemical Passivation Of Si and Sigesupporting

confidence: 77%

Ultrasonic Processing of Si and SiGe for Photovoltaic Applications

Nadtochiy¹,

Podolian²,

Korotchenkov³

et al. 2021

Solar Cells - Theory, Materials and Recent Advances

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show abstract

“…The likely mechanism that has come to describe the previous observations with chloroform CHCl 3 and dichloromethane CH 2 Cl 2 relies on the fact that these solutions act as sources of carbon, which can saturate the dangling bonds revealed on the surface of Si, thus passivating the surface [ 15 , 51 ]. In this scenario, using CHCl 3 or CH 2 Cl 2 yields the Si–H and C–Cl bonds, which react, forming C–H species.…”

Section: Resultsmentioning

confidence: 99%

Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients

et al. 2021

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The field of chemical and physical transformations induced by ultrasonic waves has shown steady progress during the past decades. There is a solid core of established results and some topics that are not thoroughly developed. The effect of varying ultrasonic frequency is among the most beneficial issues that require advances. In this work, the effect of sonication of Si wafers in tetrahydrofuran on the photovoltage performance was studied, with the specific goal of studying the influence of the varying frequency. The applied ultrasonic transducer design approach enables the construction of the transducer operating at about 400 kHz with a sufficient sonochemical efficiency. The measurements of the surface photovoltage (SPV) transients were performed on p-type Cz-Si(111) wafers. Sonication was done in tetrahydrofuran, methanol, and in their 3:1 mixture. When using tetrahydrofuran, the enhanced SPV signal (up to ≈80%) was observed due to increasing sonication frequency to 400 kHz. In turn, the signal was decreased down to ≈75% of the initial value when the frequency is lowered to 28 kHz. The addition of methanol suppressed this significant difference. It was implied that different decay processes with hydrogen decomposed from tetrahydrofuran could be attempted to explain the mechanism behind the observed frequency-dependent behavior.

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Photovoltaic Characterization of Si and SiGe Surfaces Sonochemically Treated in Dichloromethane

Cited by 2 publications

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Ultrasonic Processing of Si and SiGe for Photovoltaic Applications

Ultrasonic Processing of Si and SiGe for Photovoltaic Applications

Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients

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