Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering

Abstract

In this study, amorphous boron carbide (BxC) and hydrogenated amorphous BxC (BxC:H) films were deposited via magnetron sputtering to investigate the effects of hydrogen on the film properties. The critical load decreased with increasing H2 flow ratio, probably due to an increase in the internal stress. In addition, the optical bandgap increased with the H2 flow ratio increased. The bandgap was controlled by the chemical bonding of carbon atoms and the chemical composition of films. The resistivity of the films increased with the H2 flow ratio and bandgap energy. The current–voltage characteristics of BxC(:H)/n-type Si heterojunctions under white light illumination showed that the short-circuit current density and open-circuit voltage were higher than the previously reported values. Results revealed that the introduction of hydrogen during deposition reduced the short-circuit current density, fill factor, and conversion efficiency, whereas the open-circuit voltage remained almost unchanged.