Photovaractor for remote optical control of microwave circuits

Малышев, С. А.; Galwas, B.A.; Piotrowski, J.; Chizh, A.; Szczepaniak, Zenon

doi:10.1109/lmwc.2002.1009994

Cited by 9 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the rapid development of material science and information technology, however, a remarkable convergence is taking place on the interface between two such originally separate areas, thereby arousing some emerging fields including lightwave electronics and microwave photonics . Among them, the interaction between the optical and microwave fields is a cornerstone for many attractive applications, such as the microwave-to-optical conversion, , electro-optic modulation, coherent quantum transduction, and optically controlled microwave transmission. − Recently, a lot of physical platforms have been constructed to perform the multi-physics field coupling. However, up to now, much effort has been primarily focused on the fiber and on-chip approaches, greatly limiting the application scenarios in wave space.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Metasurface for Free-Space Optical–Microwave Interactions

Zhang

Sun

Zhu

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Photon-electron interactions are essential for many areas such as energy conversion, signal processing, and emerging quantum science. However, the current demonstrations are typically targeted to fiber and on-chip applications and lack of study in wave space. Here, we introduce a concept of optoelectronic metasurface that is capable of realizing direct and efficient optical–microwave interactions in free space. The optoelectronic metasurface is realized via a hybrid integration of microwave resonant meta-structures with a photoresponsive material. As a proof of concept, we construct an ultrathin optoelectronic metasurface using photodiodes that is bias free, which is modeled and analyzed theoretically by using the light-driven electronic excitation principle and microwave network theory. The incident laser and microwave from the free space will interact with the photodiode-based metasurface simultaneously and generate strong laser–microwave coupling, where the phase of output microwave depends on the input laser intensity. We experimentally verify that the reflected microwave phase of the optoelectronic metasurface decreases as the incident laser power becomes large, providing a distinct strategy to control the vector fields by the power intensity. Our results offer fundamentally new understanding of the metasurface capabilities and the wave–matter interactions in hybrid materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Optoelectronic Metasurface for Free-Space Optical–Microwave Interactions

Zhang

Sun

Zhu

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…For example, the search for sustainable electric power supply is currently concentrated on photo-powered energy sources, and photocapacitors are an innovation in this field with promising applications in integrated devices such as medical sensors [1,2] and next generation solar cells [3][4][5][6]. Furthermore, the property of light-dependent capacitance of photovaractors is useful for optical control or modulation of microwave signals [7,8]. It should be noted that all these optical devices operate on the basis of carrier generation, i.e., when light photon energy is not less than a semiconductor forbidden energy gap.…”

Section: Introductionmentioning

confidence: 99%

Hot Carrier Photocurrent through MOS Structure

Gradauskas

Ašmontas

2021

Applied Sciences

View full text Add to dashboard Cite

Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character. Its rise is based on the hot carrier phenomenon; no carrier generation is present, only redistribution of laser-heated carriers takes place at the semiconductor surface. The magnitude of this displacement current is related to the capacitance of the structure and is dependent on the rate of the laser pulse change as well as on the laser light intensity. This effect can find application in the detection of fast infrared laser pulses as well as in the development of infrared photovaractors. Operation of such devices would not require cryogenic temperatures what is usually needed by the long-wavelength infrared semiconductor technique.

show abstract