Photostimulated transformations in nanosized MoO3 films

Суровой, Э. П.; Borisova, N. V.; Bugerko, L. N.; Surovaya, V. E.; Ramazanova, G. O.

doi:10.1134/s0036024413120248

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…When implanting small doses (D  10 16 ioncm -2 ) of the alloying element, dilute ion-implanted alloys with an impurity element concentration of ~ 1 at. % are formed [10][11][12][13][14][15]. The depth of the maximum content of the alloying element in the surface layer of the crystal is mainly determined by the ion energy of the impurity element [17,18].…”

Section: Resultsmentioning

confidence: 99%

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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One of the fundamental directions in the use of ion implantation of metals is the creation of surface alloys of any composition. And their quantitative characteristic is the distribution of atoms of the impurity element in depth of the surface layer of the metal substrate [1][2][3][4][5]. In the study of the contribution of each component in changing the electronic structure, emission-adsorption and catalytic properties of multicomponent metal alloys, the creation of particularly pure metal solid solutions, as well as the determination of the actual concentration of alloying elements and their distribution in the surface layer of crystals are of great value. To study the distribution profiles of the concentration of ion-implanted atoms of refractory metals in alloys based on refractory metals, the method of layer-by-layer analysis using Auger electron spectroscopy in conjunction with an argon ion cannon is used. In this work, on the example of implantation of low-energy molybdenum ions into a single crystal of niobium facet (100), the features of creating surface alloys based on refractory metals with a low concentration of the alloying element and the distribution of the ion-implanted metal in the near-surface region of the crystal are studied [5][6][7][8][9].

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Section: Resultsmentioning

confidence: 99%

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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“…We associate peaks A and C with indirect optical transitions [13,14] for a pure Mo (111) single crystal. Thus, the photoelectron spectra for pure Mo (111) exhibit maxima due to the band structure of molybdenum, and in the spectrum obtained after doping with zirconium ions, an additional maximum appears at 1.2-1.3 eV below the Fermi level [15][16][17][18][19][20].…”

Section: Resultsmentioning

confidence: 99%

Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

et al. 2021

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Crystals of niobium and its alloys obtained by low-energy implantation of molybdenum and zirconium ions were studied in a multi-functional installation. The energy distribution curves of N (E) photoelectrons before and after heating niobium – molybdenum – zirconium alloys were studied. The contribution of surface zones formed by molybdenum and zirconium atoms to photoelectron emission in the photon energy region of 8–10 eV was analyzed.

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Experimental and theoretical study of the effect of bombardment with Ar⁺ ions on the spectrum of valence electrons of a Si (111) single crystal

et al. 2021

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The paper studies the effect of disordering of the surface layers on the electronic and optical properties of single-crystal silicon.An analysis of the photoelectron spectra shows that with complete amorphization of the surface density, the condition of Si valence electrons of changes significantly. In particular, the positions of the main maximum of the electrons of the valence band of Si (111) shift by ~ 0.4 eV towards higher binding energies and the band gap Eg increases by 0.1-0.15 eV. The energy of a valence electron in amorphized silicon, which at low impurity concentrations, i.e. at low bombardment doses (D <1015 cm–2), the potential Mkk and, therefore, the shift of the maximum of the density of states vary linearly with respect to concentration. At high impurity concentrations (at doses D> 1015 cm–2), corresponding to the transition to amorphous silicon, the concentration dependence of Mkk is very weak. Therefore, upon amorphization, the peak A of the density of states of the silicon valence band under consideration is shifted to the region of lower electron binding energies. The theoretical substantiation of the obtained experimental results is given.

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Photostimulated transformations in nanosized MoO3 films

Cited by 4 publications

References 14 publications

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

Experimental and theoretical study of the effect of bombardment with Ar⁺ ions on the spectrum of valence electrons of a Si (111) single crystal

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Photostimulated transformations in nanosized MoO3 films

Cited by 4 publications

References 14 publications

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

Experimental and theoretical study of the effect of bombardment with Ar+ ions on the spectrum of valence electrons of a Si (111) single crystal

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Experimental and theoretical study of the effect of bombardment with Ar⁺ ions on the spectrum of valence electrons of a Si (111) single crystal