2006
DOI: 10.1070/qe2006v036n08abeh013270
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Photosensitivity of nanoporous glasses and polymers doped with Eu(fod)3molecules

Abstract: The combined effects of N 2 -implantation at S/D extension and N 2 O oxide on 0.18 µm n-and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N 2 O oxide or N 2 -implantation. However, for p-channel transistors, opposite trends are observed for N 2 O oxide and N 2 -implantation. Finally, nitrogen incorporation by either method is found to im… Show more

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Cited by 6 publications
(13 citation statements)
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“…The photoluminescence excitation channel in this case consisted of an LD(D)-400 deuterium lamp and an MDR-12 monochromator with spectral resolution 13.6 nm (λ em = 300 nm) or an NSHU590 UV light-emitting diode (LED) (Nichia Corporation, Japan) with wavelength at the maximum of the luminescence band equal to 380 nm and half-width 0.1 eV, radiation power density at the sample ~0.1 W/cm 2 . The same setup was used in earlier work [8,10,13,14] devoted to the study of the luminescent characteristics of various transparent dielectrics containing Eu(fod) 3 molecules. In the studies of the temperature dependences of the photoluminescence intensity, the uncertainty in establishment of the temperature was no worse than 0.…”
Section: Introductionmentioning
confidence: 97%
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“…The photoluminescence excitation channel in this case consisted of an LD(D)-400 deuterium lamp and an MDR-12 monochromator with spectral resolution 13.6 nm (λ em = 300 nm) or an NSHU590 UV light-emitting diode (LED) (Nichia Corporation, Japan) with wavelength at the maximum of the luminescence band equal to 380 nm and half-width 0.1 eV, radiation power density at the sample ~0.1 W/cm 2 . The same setup was used in earlier work [8,10,13,14] devoted to the study of the luminescent characteristics of various transparent dielectrics containing Eu(fod) 3 molecules. In the studies of the temperature dependences of the photoluminescence intensity, the uncertainty in establishment of the temperature was no worse than 0.…”
Section: Introductionmentioning
confidence: 97%
“…The bright luminescence of Eu 3+ ions arising upon excitation of the 5 D 0 → 7 F j transition in the red region of the spectrum may be used for a wide variety of practical applications of these materials [1][2][3][4][5][6][7][8]. In this case, there is special interest in the possibility of exciting this luminescence through the ligand component of europium β-diketonates, since such excitation does not occur through the system of narrow absorption bands of the Eu 3+ ions but rather through the broad bands of the intraligand π−π * transition or a ligand-metal charge transfer band (LMCT) located in the near UV range (see, for example, [3,[9][10][11]. The problem becomes especially important in cases when the power of the exciting radiation cannot be very high, for example, when designing different kinds of sensor devices based on polymers doped with europium β-diketonates [5,7,8].…”
Section: Introductionmentioning
confidence: 99%
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