Photosensitive a-Si:H devices fabricated by DC magnetron reactive sputtering

Taurbaev, T.I.; Aitmambetov, R.M.; Swanbaev, E.A.; Manakov, S. M.; Suleimenov, M.D.

doi:10.1016/s0022-3093(87)80423-4

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“…Films of a-Si:H with thickness of about 0.5 to 1 μm were deposited on quartz substrates by dc silane decomposition or magnetron sputtering (see for details ref. [ 6 ]). The deposited films were subjected to conventional RTA using irradiation by a tungsten halogen lamp with a single-pulse cycle to increase the temperature from room temperature to 900°C or to 950°C and back.…”

Section: Resultsmentioning

confidence: 99%

Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

et al. 2011

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Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

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Section: Resultsmentioning

confidence: 99%