Photosensing properties of ruthenium(II) complex-based photodiode

İmer, Arife Gencer; Dere, A.; Al‐Sehemi, Abdullah G.; Dayan, Osman; Şerbetçi, Z.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1007/s00339-019-2504-1

Cited by 26 publications

(13 citation statements)

References 42 publications

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“…The maximum %PS value of the CuAlV/n-Si/Al photodiode was found as high as 44342.93 under 100 mW cm −2 of illumination and at 0 V conditions. Some close maxima %PS values akin to the one found here were reported in some previous studies [14,16,48,60,61] and some lower values were reported in some other studies [62,63].…”

Section: Characteristics Of Cualv/n-si/al Nems Photodiodesupporting

confidence: 91%

“…The current rectification ratio (RR) is the ratio of the absolute values of current at an equivalent forward and reverse applying voltage couple (±V). By using the RR(±V) = I(V)/I(-V) formula, at ±2 V, the RR value of the CuAlV/n-Si/Al photodiode was found as supremely as 28132.99 (≈3 × 10 4 ) for dark condition and as 72 for 100 mW cm −2 of light condition [8,10,47,48]. This ∼3 × 10 4 of high rectifying property of the fabricated SMAbased photodiode indicates the successful Schottky barrier formation in the interface between the CuAlV SMA thin film layer and n-Si wafer, and it also indicates that the thermionic emission theory dominates the charge carrier mechanism in the Schottky junction of the CuAlV/n-Si/Al photodiode.…”

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

“…The value of the ideality factor, n for the CuAlV/n-Si/Al photodiode was found 2.43 for the dark condition. The deviations from the ideal unity (1) value of n are attributed to some factors such as the influence of impurities, interface states, inhomogeneity of barrier height, and non-uniform distribution of charges in the interface [8,48,54]. The value of the Schottky barrier height (f b ) of the CuAlV/n-Si/Al photodiode can be determined by using the formula [8,48] given below;…”

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

“…The unit of D * is Jones or cm.Hz 1/2 /W. For shot-noise limit condition [64,65], the value of D * can be determined by using the formula [8,48,64,65] where; q refers to the electronic charge. In this way, all the specific detectivity D * values at −2 Volt and under all light power intensities for the CuAlV/n-Si/Al photodiode were determined as high as around 6-7 × 10 10 Jones nearly approaching 10 11 Jones and presented in table 3.…”

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

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Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Karaduman,

canbay,

Dere

et al. 2024

Phys. Scr.

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In this work, a novel smart (shape memory) alloy metalized photonic silicon wafer photodiode with Schottky type CuAlV/n-Si/Al contact structure as a nano-electro-mechanical-system (NEMS) photodevice was fabricated by thermal evaporation technique. The CuAlV memory alloy used as the top Schottky metal contact electrode was produced by arc melting technique and a subsequent quenching in an iced-brine water medium, and its shape memory effect characteristics were revealed by thermal and structural tests. The fabricated photonic NEMS photodiode was characterized by different photo-electrical (I-V, I-t) and frequency/time dependent and illuminated capacitance (C-V/f, C-t, C-V/ill.) and conductance-voltage (G-V) measurements under different frequencies and artificial light intensity power conditions. The I-V tests showed an excellent current rectifying ability and very well net photocurrent generation features of the photodiode. The specific detectivity of the photodiode was found as high as almost approaching 1011 Jones. The SCLC (space charge limited current conduction) analyses made on the double-log I-V plots of the photodiode revealed that the trap-filling TFL-SCLC and trap-free SCLC current conduction mechanisms are the two prevailing conduction mechanisms in the forward bias voltage region. The density of interface states (Dit) of the fabricated photodiode was determined. Moreover, an excellent reproducibility of light-induced photocapacitance formation of the novel photodiode was demonstrated by C-V/t measurements under different artificial light power intensities.

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Section: Characteristics Of Cualv/n-si/al Nems Photodiodesupporting

confidence: 91%

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

See 2 more Smart Citations

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Karaduman,

canbay,

Dere

et al. 2024

Phys. Scr.

Self Cite

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“…Notably, the ≈40 ms rise time and ≈350 ms fall time are shorter than previously published capacitive photodetectors. [ 21,45,46 ] Furthermore, the ≈150% capacitance change is large, demonstrating pronounced sensitivity, and dynamic range.…”

Section: Resultsmentioning

confidence: 99%

Multispectral and Circular Polarization‐Sensitive Carbon Dot‐Polydiacetylene Capacitive Photodetector

Shauloff

Bisht

Manikandan

et al. 2022

Small

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Multispectral photodetectors (MSPs) and circularly polarized light (CPL) sensors are important in opto‐electronics, photonics, and imaging. A capacitive photodetector consisting of an interdigitated electrode coated with carbon dot/anthraquinone‐polydiacetylene is constructed. Photoexcitation of the carbon dots induces transient electron transfer to the anthraquinone moieties, and concomitant change in the film dielectric constant and recorded capacitance. This unique photodetection mechanism furnishes wavelength selectivity that is solely determined by the absorbance of the carbon dots incorporated in the anthraquinone‐polydiacetylene matrix. Accordingly, employing an array of polymerized‐anthraquinone photodetector films comprising carbon dots (C‐dots) exhibiting different excitation wavelengths yielded optical “capacitive fingerprints” in a broad spectral range (350–650 nm). Furthermore, circular light polarization selectivity is achieved through chiral polymerization of the polydiacetylene framework. The carbon dot/anthraquinone‐polydiacetylene capacitive photodetector features rapid photo‐response, high fidelity, and recyclability as the redox reactions of anthraquinone are fully reversible. The carbon dot/anthraquinone‐polydiacetylene platform is inexpensive, easy to fabricate, and consists of environmentally friendly materials.

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Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative study

et al. 2020

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Photosensing properties of ruthenium(II) complex-based photodiode

Cited by 26 publications

References 42 publications

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Multispectral and Circular Polarization‐Sensitive Carbon Dot‐Polydiacetylene Capacitive Photodetector

Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative study

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