Photoresist performance modification through plasma treatment

Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Okabe, Noriaki; Koike, Kyohei

doi:10.1117/12.2085093

Cited by 3 publications

(2 citation statements)

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“…Especially, the number of lithography steps and etching steps has been expanded by the combination of processes, and it has been occupying a large portion of total manufacturing cost [6,7]. DTD (Dual Tone Development) process is one of the simplest pitch split process which can reduce exposure steps as we reported last year [5,[8][9][10]. KrF-NTI which can show the equivalent performance to an ArF-PTD system is also effective to reduce tool cost [11,12].…”

Section: Introductionmentioning

confidence: 99%

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

Shirakawa

Kato

Furutani

et al. 2016

J. Photopol. Sci. Technol.

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Negative tone imaging (NTI) process is a method for obtaining a negative-tone reversal pattern by developing with an organic solvent. As NTI process can break-through the resolution limit of a conventional positive tone development (PTD) process at specific pattern such as trenches and contact holes, it has been applied for a mass production in 20nm and 14nm nodes devices. In NTI system, because a developer is changed from a hydrophilic aqueous solution to a hydrophobic organic solvent, it is possible to review the common resist stack which is optimized for a PTD process. In this paper, we examined the possibility of a bi-layer process using a Si-containing NTI resist. Etching selectivity between the Si-NTI resist and a SOC improved by raising Si-content of the Si-NTI resist, but resolution deteriorates as a trade-off. By suppressing swelling behavior of the Si-NTI resist with a polymer structure control, we overcame this trade-off. As a result, in sub-90 nm pitch L/S and CH patterns, the resolution of the Si-NTI resist achieved comparable level to a conventional NTI resist. In addition, SOC etching was successfully carried out by using the Si-NTI resist pattern as an etching hard mask.

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Section: Introductionmentioning

confidence: 99%

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

Shirakawa

Kato

Furutani

et al. 2016

J. Photopol. Sci. Technol.

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“…Extreme ultraviolet (EUV) lithography with an exposure wavelength of 13.5 nm is considered to be a promising alternative for lithography and has made excellent progress over the past few years [1][2][3][4]. Prior to implementation of EUV lithography for high volume manufacturing, however, extension of ArF immersion lithography by multiple-patterning is required as a complementary approch [5][6][7][8]. Self-aligned patterning, a spacer defined process, is already applied to the massproduction because it can easily make high resolution patterns based on repetition of simple processes.…”

Section: Introductionmentioning

confidence: 99%

Silicon Infiltration into Functional Polymer for Nano-scale Pattern Development

Yamada

Yamato

Oyama

et al. 2017

J. Photopol. Sci. Technol.

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We report on the utility of self-aligned quadruple patterning (SAQP) using dual carbon layers as mandrels and silicon oxide films as spacers to improve pattern comprehensive pattern fidelity, such as line edge roughness (LER)/ line width roughness, local critical dimension uniformity, and pattern placement, compared to the design. While the use of carbon layers and silicon oxide films enables reduced LER, the required etching selectivity between the two carbon layers was difficult to obtain. We gained this selectivity by infiltrating silicon into one carbon layer. Thus, a SAQP scheme was developed and successfully demonstrated to produce a sub-20-nm half pitch pattern. The low LER value obtained after etching the first carbon layer was preserved throughout the process.

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The line edge roughness improvement with plasma coating for 193nm lithography

Zheng

Zhang

2017

2017 China Semiconductor Technology International Conference (CSTIC)

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Photoresist performance modification through plasma treatment

Cited by 3 publications

References 0 publications

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

Silicon Infiltration into Functional Polymer for Nano-scale Pattern Development

The line edge roughness improvement with plasma coating for 193nm lithography

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