Photoresist outgassing at 157 nm exposure

Hien, Stefan; Angood, Steve; Ashworth, Dominic; Basset, Steve; Bloomstein, Theodore M.; Dean, Kim; Kunz, Roderick R.; Miller, Daniel A.; Patel, Shashikant; Rich, Georgia K.

doi:10.1117/12.436834

Cited by 23 publications

(14 citation statements)

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“…In Figure 5 these thickness changes are calculated as removal rates: the average rate is about 0.4 nm/kJ/cm 2 . This removal rate of 0.4 nm/kJ/cm 2 for FIB depositions is about an order of magnitude smaller than previously studied highly conjugated, "graphitized" polymer films with cleaning rates of 3nm/ (kJ/cm 2 ) / 1 ppm oxygen [2,3].…”

Section: Uv Lamp Cleaning (172nm 1% O 2 )mentioning

confidence: 83%

“…The reported cleaning rates are in the range of about 3nm / kJ/cm 2 / 1ppm O 2 [1,2] In the case of removing organic compounds from highly contaminant sensitive 157nm optical elements the cleaning effect is appreciated and explored [3,4,5] But there are also layers purposely deposited on mask surfaces which should not be impacted or even removed during these cleaning procedures: FIB-deposited carbon-containing films. These FIB depositions are state-of-the art for the repair of reticles [6].…”

Section: Introductionmentioning

confidence: 98%

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Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles

Eisner¹,

Schilz

Williams³

et al. 2002

SPIE Proceedings

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An UV lamp cleaning system (172nm) and a 157nm laser have been used to irradiate Ga-based focused ion beam (FIB) repair depositions on 193nm and 157nm reticles. The thickness change of the depositions due to the irradiation has been measured using an atomic force microscope. For the 193nm reticle additional transmission measurements were realized. These depositions are found to be highly resistant to UV lamp cleaning treatments of up to 18h (2mW/cm 2 , 1% O 2 ). Extended tests were also done with 157nm irradiation (9kJ/cm 2 , 1-10ppm O 2 ). At the end of these tests a film loss of the depositions of 0.4nm /kJ/cm 2 and a transmission change of 10% could be determined.

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Section: Uv Lamp Cleaning (172nm 1% O 2 )mentioning

confidence: 83%

Section: Introductionmentioning

confidence: 98%

Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles

Eisner¹,

Schilz

Williams³

et al. 2002

SPIE Proceedings

Self Cite

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“…In certain cases, the films of molecular contaminants formed on optical surfaces can be removed by cleaning them with appropriate solvents or by applying several cleaning techniques such as CO 2 snow cleaning, ion or laser cleaning, on-orbit exposure to ambient atomic oxygen, synchrotron radiation heating and VUV irradiation [36]. Exposure of contaminated surfaces at longer wavelengths is less efficient to clean due to lower photon energy and lower fragmentation probability than exposure at short wavelengths [37,38].…”

Section: Introductionmentioning

confidence: 99%

Light induced adsorption of Si nano-composites in LiF crystals at 157nm

Sarantopoulou

Kollia

Cefalas

et al. 2007

Applied Surface Science

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“…9,[10][11][12][16][17][18][19][20] Many of these studies have focused on the outgassing (including photo-induced outgassing) of organic contaminants from photoresists. 10,12,[16][17][18] These organic contaminants reduce system transmittance by partially absorbing the light energy at the specific radiation wavelength by being in the beam path or adsorbed to the lens surface (see inset Figure 1). Basic (e.g.…”

Section: Introductionmentioning

confidence: 99%

New concerns with the design of filters for the protection of lithography optics

et al. 2003

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The optimal medium in which DUV resists are exposed is becoming increasingly under investigation by lithography tool manufacturers. These medium requirements have created even more design restrictions for effective filtration methods. Traditional airborne molecular contamination control in tracks and exposure tools has focused on the removal of weak bases that poison the resist. Newer concerns, including; the degradation of optics, changes in resist sensitivity, the index of refraction and the demands of tighter geometry's, all contribute to the need for quantification and control of gas-phase contamination within exposure tools. As a result, filter manufacturers are required not only to remove a broader spectrum of contaminants (e.g. organic and acid gases), but to supply removal efficiency data, under a variety of conditions including; variable challenge concentrations, mixed stream contamination, humidity (dew points), flow rates, and temperatures. The paper will address these new concerns focusing on the efficiency effects of relative humidity for various contaminant streams using a variety of filter media. In addition, the removal of hydrophilic compounds such as ammonia and sulfur dioxide when drying an air stream will also be considered. This ongoing study has contributed to the design of a point-of-use air-shower filter used to protect lithography lenses. Preliminary field tests by a major manufacturer indicate that the removal of the specified bases, acids and total organics is below detection limits of <0.1 ppb.

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Photoresist outgassing at 157 nm exposure

Cited by 23 publications

References 0 publications

Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles

Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles

Light induced adsorption of Si nano-composites in LiF crystals at 157nm

New concerns with the design of filters for the protection of lithography optics

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