Photorefractive two-wave mixing in semiconductors of the 4¯3mspace group in general spatial orientation

Abstract

The photorefractive two-wave mixing gain coefBcient F of GaAs:Cr and InP:Fe, cut with different crystallographic orientations, was determined using a cw Nd: YAG (neodymium doped yttrium aluminum garnet) laser at 1064 nm. The polarization and orientation dependence of the gain coefficient I' are calculated from the pertinent interaction matrix elements. Results are discussed with respect to the contactless determination of crystallographic parameters via the photorefractive effect. PACS number(s): 42.65.Hw, 42.70.Nq

Hologram recording and reading in cubic gyrotropic photorefractive piezocrystals (review)

“…For example, four-and two-wave mixing in InP and GaAs crystals of (111)-cut (symmetry class 4 _ 3m) was studied [110]. Two-wave mixing in crystals of this class was examined for the instance of an arbitrary cut [111]. Theoretical and experimental investigations using GaAs crystal as an example led to the conclusion that the diffraction efficiency in class 4 _ 3m crystals of (111)-cut with polarization of recording waves perpendicular to the plane of incidence did not depend on the orientation vector of the holographic grating in the cut plane [112].…”