Abstract-The evolution of a space-charge field during photorefractive two wave mixing in unbiased sample is considered. An approximate analytical solution describing the photorefractive material response to the interference pattern of arbitrary fringe contrast is presented. Obtained solutions are compared with the results of numerical simulations.The photorefractive (PR) effect relies on the refractive index changes induced by non-uniform illumination in the photoconductive and electro-optic material. The PR effect is commonly explained in the framework of the band transport model [1], which assumes photogeneration of free carriers, their transport and trapping in dark regions. The redistribution of carriers generates the space-charge electric field (E sc ) inside the crystal. The material equations of this model are nonlinear and coupled, therefore they do not have an exact analytical solution in a general case. One of the most often investigated geometries is the two-wave mixing (TWM) configuration where interfering waves create a sinusoidal distribution of light intensity. Several methods of the space-charge field determination in such a case were developed. The majority of research is devoted to the study of steady state solutions. The dynamics of PR grating is essentially described in the frames of two approaches. For a small contrast of interference fringes, a linearization of material equations can be made. A high fringe contrast case is usually studied by means of numerical methods. To date very few attempts to find an analytical solution for the transient response of a photorefractive crystal have been taken. For example, an approximate analytical solution for space-charge field evolution given in [2] is valid only for the grating period much larger than the Debye length. In our paper we present an alternative time-dependent analytical solution applicable for arbitrary modulation depth of the interference pattern. The relationship that describes directly the grating formation dynamics in TWM geometry without external electric field was found. The applied approach is based on the idea presented in the work [3]. * E-mail: ewa.raczka@ps.plWe consider the band transport model with one type of charge carriers (electrons), and one photoactive donor level of dopants with concentration N D which are partially compensated by shallow fully ionized acceptors with concentration N A = N A − = constant. In the considered case no external electric field is applied to the crystal, so the electron transport is caused only by diffusion. A photorefractive transport model is described by the following set of equations:where n, N D , N D + , N A are electron, donor, ionized donor and acceptor densities, respectively. S describes photoexcitation cross section, I -light intensity, γ -recombination constant, j -current density, µ -electron mobility k B -Boltzmann's constant, T -absolute temperature, ε = ε 0 ε r an electric permittivity and) charge density. Additionally, we have the external condition:The photorefractive respon...