Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells

Abstract

Lattice-matched and strained InxGa1−xAs/In0.52Al0.48As single quantum wells with x=0.53 and x=0.60 have been studied by the optical modulation technique of photoreflectance (PR) at room temperature. The measurements have allowed the observation of interband transitions from the heavy- and light-hole valence subbands to the conduction subbands. The PR data have been adjusted with a least-squares fit to the first-derivative functional form. The energetic positions of the optical transitions deduced from the fit have been compared with theoretical values obtained by an envelope function model calculation including strain effects. The best adjustment allowed the determination of the conduction-band offset parameter Qc which is found equal to 0.71±0.07 for the lattice-matched and strained compositions.

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

“…The InGaAs/InAlAs/InP quantum well (QW) heterostructures, including single quantum wells, multiple quantum wells, and superlattices, have special advantages for applications in long-wavelength optical communications as well as high-speed electronic and photonic devices [6–10]. First, the band structure and band offset of the InGaAs/InAlAs QW heterostructures can be flexibly tailored for different application purposes by varying either the composition or the thickness of the InGaAs active layer and the InAlAs barrier layer accordingly [11, 12]. Second, the wavelength of InGaAs/InAlAs QW inter-band transitions can cover the standard 1.31- and 1.55-μm optical communication wavelengths [13].…”

The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

“…The band offset ratio is taken as 72:28. 9 Other parameters are fitted by Vegard's law linearly using the parameters of binary compounds including AlAs, InAs, and GaAs.…”

Type II recombination and band offset determination in a tensile strained InGaAs quantum well

“…In x Ga 1Ϫx As based heterostructures grown on InP are very interesting for optoelectronic devices working in the 1.5-1.7 m spectral range since the growth of both tensile and compressive strained layers is allowed. While compressive strained structures are now well known [1][2][3][4] few investigations have been done on tensile strained InGaAs layers, which can be used in insensitive polarization electroabsorption modulators 5,6 or amplifiers. 7 In x Ga 1Ϫx As/In 0.53 Ga 0.47 As (xϽ0.53) structures grown on InP are expected to give type II band lineup for light holes.…”