Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components

Lastras-Martı́nez, L. F.; Chavira-Rodríguez, M.; Lastras‐Martínez, A.; Balderas‐Navarro, R. E.

doi:10.1103/physrevb.66.075315

Cited by 17 publications

(26 citation statements)

References 23 publications

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“…Furthermore, the squares of the interband transition matrix elements become polarization dependent [14,15]. These facts induce an anisotropy on the dielectric function.…”

Section: Theorymentioning

confidence: 97%

“…The Hamiltonian (2) splits and shifts the energy of critical points of L and G symmetry [14,15,20]. Furthermore, the squares of the interband transition matrix elements become polarization dependent [14,15].…”

Section: Theorymentioning

confidence: 99%

“…We will consider the perturbation of the bands by two mechanisms: a piezo-electric stress induced by a surface electric field along ½001 and an applied uniaxial stress along ½110. Under these conditions the non-zero elements of the strain tensor referred to the crystal 100 axes are [14] …”

Section: Theorymentioning

confidence: 99%

“…In an unstressed crystal the PRD line shape comprise only a linear electro optic (LEO) component, as the quadratic electro optic (QEO) term, that dominates the PR spectrum, is isotropic for cubic symmetries [19]. In contrast, the PRD spectrum of a zincblende ð001Þ crystal under a uniaxial stress along ½110 comprises both LEO and QEO components [14].…”

Section: Introductionmentioning

confidence: 95%

“…Among these components we can mention those associated to surface reconstruction (surface dim-mers) [2][3][4][5][6], dislocations [7][8][9], local field effects [10] and surface electric fields [11]. Applications of RDS include the in situ monitoring of the epitaxial growth of zincblende semiconductors and the determination of piezo-optical properties of semiconductors [12][13][14][15][16][17][18]. Nevertheless, despite its sensitivity and flexibility, due to the multiplicity of mechanisms that may contribute to RDS intensity, the present theoretical understanding of RDS line shapes is limited and have prevented the widespread use of RDS as an optical probe in a range of applications including epitaxial growth monitoring.…”

Section: Introductionmentioning

confidence: 99%

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Strain induced optical anisotropies in zincblende semiconductors

Lastras-Martı́nez

Balderas‐Navarro

Chavira-Rodríguez

et al. 2003

Physica Status Solidi (b)

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Reflectance Difference (RD/RAS) spectroscopy has emerged in the last two decades as a sensitive probe for the study of surface and surface-induced phenomena in zincblende semiconductors. This spectroscopy measures the difference in reflectivity between two mutually orthogonal polarizations and it is thus specific to semiconductor regions with symmetries lower than cubic. Photoreflectance-difference (PRD) spectroscopy is a technique closely related to RD spectroscopy that measures the difference between two photoreflectance spectra, one with linearly-polarized light and the other with non-polarized light. In contrast to RD spectroscopy, PRD spectroscopy is specific to reflectance anisotropies of electro-optic origin. In this paper we will discuss the application of both RD and PRD spectroscopies to the study of strain-induced optical anisotropies in zincblende semiconductors. We will present a theoretical line shape model for both RD and PRD spectra that describes with high accuracy the experimental spectra. Results show the high sensitivity of these techniques for the study of piezo-optical properties of zincblende semiconductors. Furthermore, results to be discussed should prove to be useful in the identification of strain-induced contributions to RD spectra that are know to comprise components with a number of physical origins.

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“…Furthermore, the squares of the interband transition matrix elements become polarization dependent [14,15]. These facts induce an anisotropy on the dielectric function.…”

Section: Theorymentioning

confidence: 97%

Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Strain induced optical anisotropies in zincblende semiconductors

Lastras-Martı́nez

Balderas‐Navarro

Chavira-Rodríguez

et al. 2003

Physica Status Solidi (b)

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Model for the strain‐induced reflectance‐difference spectra of InGaAs/GaAs (001) epitaxial layers

Lastras‐Martínez

Balderas‐Navarro

Medel‐Ruíz

et al. 2003

phys. stat. sol. (c)

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We present a model to describe the Reflectance-difference (RD) spectra of InGaAs grown on GaAs (001) at T=500 o C, in the energy range from 2.3-3.5 eV. The model assumes the presence of an orthorhombic strain in the InGaAs epilayer that accounts for an anisotropic process of nucleation of InGaAs islands. We show that the developed model leads to accurate fits to the experimental RD spectra of InGaAs/GaAs for epilayer thickness both below and above of the critical thickness for the 2D-3D growth-mode transition. From the fitting of the theoretical model to the experimental RD line shapes we obtain quantitative information on changes in surface stoichiometry and morphology at the onset of the 2D-3D transition. Our results demonstrate that the RD line shape of InGaAs/GaAs in the 2.3-3.5 eV energy range can be explained entirely in terms of surface-modified InGaAs E 1 and E 1 +∆ 1 bulk transitions with no need to invoke surface states.

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