Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure

Yan, Dong; Pollak, Fred H.; Boccio, V. T.; Lin, C.L.; Kirchner, P. D.; Woodall, J. M.; Gee, Russell C.; Asbeck, P.M.

doi:10.1063/1.108308

Cited by 33 publications

(8 citation statements)

References 6 publications

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“…Photoreflectance at 300K also has been used to study an InP/InGa1..As HBT structure with a carbon-doped base grown by gas source MBE . 16 From the FKOs associated with both the InGaAs and InP signals it was possible to determine FdC in the n-InGaAs collector (30 kV/cm) and n-InP emitter (100 kV/cm) regions. These field values were compared with numerical simulations based upon the intended structure.…”

Section: Heterojunction Bipolar Transistor Structuresmentioning

confidence: 99%

<title>Characterization of semiconductor device structures by modulation spectroscopy</title>

Qiang

Yan

Yin

et al. 1994

Spectroscopic Characterization Techniques for Semiconductor Technology V

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This paper reviews the use of modulation spectroscopy for the characterization of a wide variety of semiconductor device structures. Some systems that will be discussed include pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well high electron mobility transistors (including the 300K determination of the twodimensional electron gas density), GaAlAs/GaAs, InP/InGaAs, InGaP/GaAs,InAlAs/InGaAs and InGaAs/GaAs heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions), GaAs/GaA1As quantum well infrared detectors, quantum well lasers, etc. Particular attention will be paid to non-destructive, contactless techniques such as photoreflectance and contactless electroreflectance that can be performed on entire wafers.

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Section: Heterojunction Bipolar Transistor Structuresmentioning

confidence: 99%

<title>Characterization of semiconductor device structures by modulation spectroscopy</title>

Qiang

Yan

Yin

et al. 1994

Spectroscopic Characterization Techniques for Semiconductor Technology V

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“…MR probes a wide range of critical points, highlighting ground-state and many higher-order interband optical transitions, from which much sample information can be extracted such as band-gap energies, alloy compositions and doping concentrations [3]. MR has been used to characterise, e.g.…”

Section: Introductionmentioning

confidence: 99%

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

Hosea

Cripps

Sale

et al. 2006

Applied Surface Science

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“…78.66.Fd; 78.20.Ci; 81.15.Cd Photoreflectance (PR) measurements are of considerable interest since they are contactless, require no special mounting of the sample, and can be performed in a variety of transparent ambients [1,2]. The PR spectra have already been proven as a valuable characterization method in the case of GaAs/GaAlAs heterojunction bipolar transistor (HBT) structures [1-3] and InP/InGaAs HBT structures [4]. Reflectance difference spectroscopy (RDS) was used to monitor crystal growth [5,6].…”

mentioning

confidence: 99%

“…The PR spectra have already been proven as a valuable characterization method in the case of GaAs/GaAlAs heterojunction bipolar transistor (HBT) structures [1][2][3] and InP/InGaAs HBT structures [4]. Reflectance difference spectroscopy (RDS) was used to monitor crystal growth [5,6].…”

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confidence: 99%

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO 2 matrix by radio-frequency magnetron co-sputtering

Liu¹,

Jia²,

Zhang³

2000

Applied Physics A: Materials Science & Processing

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Nanocrystalline GaSb embedded in SiO 2 films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO 2 matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement. 78.66.Fd; 78.20.Ci; 81.15.Cd Photoreflectance (PR) measurements are of considerable interest since they are contactless, require no special mounting of the sample, and can be performed in a variety of transparent ambients [1,2]. The PR spectra have already been proven as a valuable characterization method in the case of GaAs/GaAlAs heterojunction bipolar transistor (HBT) structures [1-3] and InP/InGaAs HBT structures [4]. Reflectance difference spectroscopy (RDS) was used to monitor crystal growth [5,6]. However, little work on the application of diffuse reflectance spectra (DRS) to investigate semiconductor structures and semiconductor interfaces has been reported. In this paper we report a DRS study at room temperature of GaSb nanocrystals embedded in SiO 2 films by radio-frequency (RF) magnetron co-sputtering. The composite films of GaSb-SiO 2 were further characterized by X-ray diffraction (XRD) and by measuring transmission absorption spectra. PACS: Experimental procedureA SiO 2 glassy plate of 60 mm in diameter containing several chips of polycrystalline GaSb was used as a target. The substrates were ultrasonically washed successively in acetone, alcohol, and deionized water in order to obtain a clean surface before being placed into a vacuum chamber. Cleaved NaCl single crystals were used for TEM observation. The chamber was evacuated to a final pressure of 2.67 × 10 −3 Pa before the high-purity (99.999%) argon gas was introduced. During sputtering, the chamber pressure was maintained at 1.5 Pa and the argon gas flow was controlled by a gas valve. The output voltage of the RF sputter gun was 1000 V. All runs started with presputtering of the target for 10-15 min. A stainless steel strip was used as a substrate resistance heater, as well as a substrate holder. The substrate temperature was measured by using a K-type Alumel-Chromel thermocouple mounted on the strip surface.X-ray diffraction (XRD) profiles were collected at room temperature in the range of 15-55 • C with D/max-rA diffractometer, equipped with a Cu K α anode at 40 kV, 100 mA, and CPS 2000. The morphology and the average size of nanoparticles were investigated with an JEM-200CX transmission electron microscope (TEM). Room-temperature optical tran...

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Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure

Cited by 33 publications

References 6 publications

<title>Characterization of semiconductor device structures by modulation spectroscopy</title>

<title>Characterization of semiconductor device structures by modulation spectroscopy</title>

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO 2 matrix by radio-frequency magnetron co-sputtering

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