Photoprotective zinc oxide coatings on polyethylene terephthalate films

Bachari, E.M.; Amor, S. Ben; Baud, G.; Jacquet, Michel

doi:10.1016/s0921-5107(00)00663-2

Cited by 30 publications

(11 citation statements)

References 25 publications

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“…We have proved a gain in adhesion of zinc oxide coatings on plasma treated PET in comparison with the same coatings on untreated PET, it varies from 12% for argon treatment, passes by almost 20% when an argon-oxygen mixture is employed and reaches 30% with a CO 2 plasma treatment [20]. The high adhesion level obtained with the carbon dioxide plasma, seems to result from a polymer ceramic interaction and this interaction if it exists, will be more important when a CO 2 plasma treatment is performed.…”

Section: Methodsmentioning

confidence: 85%

“…The sputtering power density was fixed at a value of 0.38 W cm À2 . These parameters were found to lead to the growth of stoichiometric coatings with a high density and low stresses [20].…”

Section: Methodsmentioning

confidence: 97%

“…The deposition of zinc oxide was carried out by sputtering from a ZnO target. This technique is well known compared to other methods to allow a low deposition temperature, a good uniformity and a high density of the deposited films [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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XPS characterisation of plasma treated and zinc oxide coated PET

Amor¹,

Jacquet

Fioux

et al. 2009

Applied Surface Science

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Section: Methodsmentioning

confidence: 85%

Section: Methodsmentioning

confidence: 97%

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XPS characterisation of plasma treated and zinc oxide coated PET

Amor¹,

Jacquet

Fioux

et al. 2009

Applied Surface Science

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“…In this spectrum (shown in figure 5), the absorbance band is situated at 411⋅5 cm -1 . This band corresponded to the Zn-O stretching vibration for a tetrahedral surrounding of the zinc atoms (Bachari et al 2001).…”

Section: Resultsmentioning

confidence: 95%

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

et al. 2007

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Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO 2 thin films have been deposited on ZnO using microwave plasma enhanced chemical vapour deposition at a low temperature (150°C). Using metal insulator semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO 2 films have been studied both at room and high temperatures. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Good electrical and reliability properties suggest the suitability of deposited ZrO 2 thin films as an alternative as gate dielectric on ZnO/n-Si heterostructure for future device applications.

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“…In the literature there are works reporting the effect of rf power on certain properties of ZnO or AZO thin films [13][14][15] and others reporting the effect of oxygen addition to the sputtering gas [16,17]. One can also find some works studying the effect of both rf power and oxygen addition on some aspects of film properties [10,[18][19][20]. However, as far as we know, there is no work so far studying the interplay between the influence of rf power and that of oxygen addition to the sputtering gas on the properties of AZO thin films.…”

Section: Introductionmentioning

confidence: 99%

Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films

Kassis

Nounou

2017

Bull Mater Sci

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The complex interplay between the influence of oxygen partial pressure and that of rf power on the structural, electrical and optical properties of rf-magnetron-sputtered aluminium-doped zinc oxide, AZO, thin films is illustrated. The dependence of film electrical resistance and interplanar spacing of film crystallites on rf power seems to be different at higher oxygen partial pressure values than at lower ones. Film preparation was performed at room temperature (without extra heating) and low pressure p = 0.5 mTorr, varying the rf power density between P = 0.57 and 2.83 W cm −2 at different relative oxygen partial pressure values. An explanation of film properties has been sought in terms of changes in the chemical properties of the films due to the bombardment of the films during film formation with negative oxygen ions.

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Photoprotective zinc oxide coatings on polyethylene terephthalate films

Cited by 30 publications

References 25 publications

XPS characterisation of plasma treated and zinc oxide coated PET

XPS characterisation of plasma treated and zinc oxide coated PET

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films

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