Photophysical, electrochemical and flexible organic resistive switching memory device application of a small molecule: 7,7-bis(hydroxyethylpiperazino) dicyanoquinodimethane

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**

“…Thin films exhibited total surface coverage in all the compounds to an extent of 10 μm. The compounds 9 a and 9 c have a leaf or petal‐like morphology whereas 9 b and 9 d show a crystalline rod‐like structure [35] . The compound 9 e has random clusters in its morphology and 9 f exhibits a coral network [36] .…”

“…These characteristics are well maintained in the proposed devices. [35] Initially, device 9 c (Figure 8), has an Ohmic conductance with a line that fits in the slope (m) for 1.06 which is due to the high charge carrier density. After the voltage bias increases beyond the switching threshold of À 1.42 V, a change in slope of 1.93 is found when there is a steady increase in the current which is in accord with the Child's law and can be designated to the trap-filled SCLC mechanism.…”

“…The compounds 9 a and 9 c have a leaf or petal-like morphology whereas 9 b and 9 d show a crystalline rod-like structure. [35] The compound 9 e has random clusters in its morphology and 9 f exhibits a coral network. [36] The grain size of the compounds is found to be large enough to ensure maximum coverage of the compounds in the thin films formed in the active layer of the devices.…”

Recent advances in organic‐based materials for resistive memory applications

“…Extensive studies have revealed that organic small molecules could be applied as excellent resistive memory materials, attributing to their advantages of low cost, light weight, mechanical flexibility, and ease of processing 47,48,66,70,83‐104 . Many organic small molecules have been reported to exhibit resistive switching characteristics, including the binary and even higher multilevel nature 70,83‐96,105,106 . Especially for the multilevel resistive memory, once demonstrated by Li et al with single‐component azobenzene‐based organic small molecules, 18 it has attracted numerous interests due to its promising application for high‐density data storage (capacity per cell from 2 n to 3 n or even higher).…”

Photoelectric Memristor-Based Machine Vision for Artificial Intelligence Applications

“…For the realization of memristors with high-performance resistive switching behaviors, the fabrication process of the device is extremely important. To date, the preparation methods of memristors mainly include magnetron sputtering, atomic layer deposition, pulsed laser deposition, spin coating method, sol–gel method, hydrothermal method, and so on. − The emerging new memory technologies include magnetic random access memory (MRAM), ferroelectric random access memory (FeRAM), phase change random access memory (PCRAM), and resistive random access memory (RRAM). − FeRAM and PCRAM are limited by the material itself, which makes it difficult to improve the characteristics . MRAM is limited by the complex material and structure, small memory window, and other factors.…”