Photopatterning and selective electroless metallization of surface-attached ligands

Dressick, Walter J.; Dulcey, C. S.; Georger, Jacque H.; Calvert, Jeffrey M.

doi:10.1021/cm00026a002

Cited by 112 publications

(86 citation statements)

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“…The UV-irradiated surfaces were, however, wetted completely (contact angle 0-11). Various functional groups such as octadecyl or phenyl groups are known to be modified to OH groups by UV irradiation using low-pressure mercury lamps [16,17]. These suggest that a small amount of adsorbed molecules on the FTO substrate was completely removed by UV irradiation.…”

Section: Surface Modification Of Fto Substratesmentioning

confidence: 99%

Acicular crystal-assembled TiO2 thin films and their deposition mechanism

Masuda

Kato

2009

Journal of Crystal Growth

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Section: Surface Modification Of Fto Substratesmentioning

confidence: 99%

Acicular crystal-assembled TiO2 thin films and their deposition mechanism

Masuda

Kato

2009

Journal of Crystal Growth

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“…[40] Consequently, Ni deposition selectivity is preserved because the quantity of Pd II bound by spurious intact ligand, such as likely occurs for Figure 6B or other surface sites on irradiated films, does not exceed this threshold. [9,23,40] Materials other than metals can be selectively deposited onto the patterned PEDA SAM template. For example, Figure 6A also shows a scheme for covalently attaching DNA to the intact amines remaining in the unirradiated regions of the PEDA SAM.…”

Section: Full Papermentioning

confidence: 99%

Deep-UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self-Assembled Monolayers

et al. 2006

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The 193 nm photochemistry of (aminoethylaminomethyl)phenethylsiloxane (PEDA) self‐assembled monolayers (SAMs) under ambient conditions is described. The primary photodegradation pathways at low exposure doses (< 100 mJ cm–2) are benzylic C–N bond cleavage (ca. 68 %), with oxidation of the benzyl C to the aldehyde, and Si–C bond cleavage (ca. 32 %). Amine‐containing photoproducts released from the SAM during exposure remain physisorbed on the surface, where they undergo secondary photolysis leading to their complete degradation and removal after ca. 1200 mJ cm–2. NaCl(aq) post‐exposure rinsing removes the physisorbed materials, showing that degradation of the original PEDA species (leaving Si–OH) is substantially complete after ca. 450 mJ cm–2. Consequently, patterned, rinsed PEDA SAMs function as efficient templates for fabrication of high‐resolution, negative‐tone, electroless metal and DNA features with good selectivity at low dose (i.e., ca. 400 mJ cm–2) via materials grafting to the intact amines remaining in the unirradiated PEDA SAM regions.

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“…[51][52][53] However, the dose necessary for photocleavage of the Si{Ph bond is larger than those for Si{Si bond and the Si{H bond. The Si{Ph bond cleavages are, therefore, omitted in Schemes 1 and 2.…”

Section: Reaction Mechanismmentioning

confidence: 99%

Poly(phenylhydrosilane): Base-developable polysilane resist

Kani

Nakano

Yoshida

et al. 1997

J. Polym. Sci. A Polym. Chem.

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Poly(phenylhydrosilane) becomes soluble in a 2.38% tetramethylammoniumhydroxide aqueous solution after exposure to UV light. This is the first report that the polysilanes not bearing acidic groups can be developed with dilute basic aqueous solutions. Addition of 3,3′,4,4′‐tetra(t‐butylperoxycarbonyl)benzophenone increases the resist sensitivity. The reaction mechanism is as follows: PS1 photodecomposes to form silyl compounds having SiOH groups, which become soluble in an aqueous base solution, because these silane compounds bearing SiOHs are acidic. © 1997 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 35: 2355–2364, 1997

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Photopatterning and selective electroless metallization of surface-attached ligands

Cited by 112 publications

References 0 publications

Acicular crystal-assembled TiO2 thin films and their deposition mechanism

Acicular crystal-assembled TiO2 thin films and their deposition mechanism

Deep-UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self-Assembled Monolayers

Poly(phenylhydrosilane): Base-developable polysilane resist

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