Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Hong, Ki-Sang; Kim, Se Hyun; Yang, Choong Jin; An, Tae Kyu; Cha, Hyojung; Park, Chanjun; Park, Jin Young

doi:10.1016/j.orgel.2010.12.022

Cited by 26 publications

(24 citation statements)

References 18 publications

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“…These values are in general agreement with similar values reported in the literature. 8 Figure 3 shows the computed values of ZT as a function of percentage oxidation based on the data in Ref. 4.…”

Section: Resultsmentioning

confidence: 99%

“…[5][6][7][8] gives a more reasonable and consistent S value. Furthermore, the figure of merit of a thermoelectric solid is expressed in terms of the dimensionless quantity ZT with Z = S 2 r/j, where r is the electrical conductivity and j is the thermal conductivity.…”

Section: Theorymentioning

confidence: 94%

“…The effective mass m* has been assumed to be m 0 (the electron rest mass), and we used a value of 1 9 10 27 m À37 for the effective density of states in PEDOT.Tos. The 2D sample is assumed to have thickness of 100 nm with j = 0.37 W/m K 4 and mobility equal to 6 9 10 À4 m 2 /V s. 8 Also shown in the figure are the power factors of PEDOT.Tos reported in Ref. 4.…”

Section: Theorymentioning

confidence: 99%

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Thermoelectric Power and ZT in Conducting Organic Semiconductor

Kwok

2011

Journal of Elec Materi

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A recent report on poly(3,4-ethylenedioxythiophene-tosylate) (PEDOT.Tos) suggested that the thermoelectric figure of merit (ZT) could be enhanced when the percentage oxidation was chemically altered. This invokes the question of whether the carrier density or the mobility was modified. In this work, we analyzed data reported by Bibnova et al. (Nat. Mater. 10, 429, 2011) and extracted the transport parameters using three-dimensional (3D) and twodimensional (2D) models. Our results indicate that the increase in the power factor (S 2 r) was due primarily to upward extension in the range of thermoelectric power. A changeover from lattice scattering to ionized impurity scattering in PEDOT.Tos allowed the equation governing the thermoelectric power to be valid at higher carrier densities, resulting in an increase in the power factor. ZT was also enhanced in PEDOT.Tos due to the low intrinsic thermal conductivity ($0.37 W/m K). The peak value of ZT ($0.3) was found close to the regime where the semiconductor turned ''metallic,'' beyond which ZT would decrease. We are of the opinion that charge-to-charge scattering (which normally would lower the power factor in highly doped semiconductors) remain subdued in PEDOT.Tos due potentially to electronic screening and a lack of long-range order. We used the reported data to compute the carrier density and mobility assuming ionized impurity scattering and found the peak power factor to occur for carrier density of $1 9 10 26 m À3 and mobility of $5 9 10 À4 m 2 /V s.

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Section: Resultsmentioning

confidence: 99%

Section: Theorymentioning

confidence: 94%

Section: Theorymentioning

confidence: 99%

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Thermoelectric Power and ZT in Conducting Organic Semiconductor

Kwok

2011

Journal of Elec Materi

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“…For that reason synthesis and characterization of new organic semiconductor materials with good luminescent properties, efficient charge transporting and stability of physico-chemical properties are required [2]. Almost all derivatives of perylenetetracarboxylic acid (PTCA) possess good fluorescent properties [5][6][7][8][9][10] and are efficient charge transporters in ordered layer [6,[11][12][13]. This makes them promising candidates for application in active layers in organic electronic devices especially in OLED and OPV.…”

Section: Introductionmentioning

confidence: 99%

“…This makes them promising candidates for application in active layers in organic electronic devices especially in OLED and OPV. Perylene derivatives depending on hydrocarbon chains substituted in the lateral positions or/and atoms attached to the main perylene core have n or p semiconductor character [7,[13][14][15][16][17]. It was also shown that the length of hydrocarbon (alkoxy or alkyl) chains and the presence of halogen atoms in so-called bay positions have a great impact on the dye molecule aggregation in highly concentrated structures, such as thin films created with the use of different techniques or molecular crystals [7,[9][10][11][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Molecular organization of perylene derivatives in Langmuir–Blodgett multilayers

et al. 2015

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Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

2012

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A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits.

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Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Cited by 26 publications

References 18 publications

Thermoelectric Power and ZT in Conducting Organic Semiconductor

Thermoelectric Power and ZT in Conducting Organic Semiconductor

Molecular organization of perylene derivatives in Langmuir–Blodgett multilayers

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

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