2005
DOI: 10.1016/j.jphotochem.2005.04.038
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Photooxidation quantum yield efficiencies of naphthalene diimides under concentrated sun light in comparisons with perylene diimides

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Cited by 31 publications
(17 citation statements)
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“…This indicates that NTCDI-F exhibits a certain degree of air stability, mostly contributed by the electron withdrawing of fluorinated substitution, which makes it less susceptible to oxidation as reported. 28 Though the device performances of NTCDI derivatives developed are not as good as those reported by Katz et al 8,9 via dropcasting using R,R,R-trifluorotoluene as a solvent, we have demonstrated the feasibility of using a new solution-processed NTCDI-F as an n-type semiconductor layer by a spin-coating process to fabricate OTFT devices in air with a certain degree of air stability.…”
Section: Resultsmentioning
confidence: 65%
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“…This indicates that NTCDI-F exhibits a certain degree of air stability, mostly contributed by the electron withdrawing of fluorinated substitution, which makes it less susceptible to oxidation as reported. 28 Though the device performances of NTCDI derivatives developed are not as good as those reported by Katz et al 8,9 via dropcasting using R,R,R-trifluorotoluene as a solvent, we have demonstrated the feasibility of using a new solution-processed NTCDI-F as an n-type semiconductor layer by a spin-coating process to fabricate OTFT devices in air with a certain degree of air stability.…”
Section: Resultsmentioning
confidence: 65%
“…27 The largest red-shift for NTCDI-F reflects that the highly electronegative F atom influences the naphthalene core in NTCDI and depresses the electronic energy level more than others, which is consistent with those reported earlier. 11,28 Morphological Studies. The solution and substrate temperatures, surface pretreatment, and baking temperature were found to be the key parameters to determine the film uniformity, surface morphology, and electrical properties of NTCDI derivatives.…”
Section: Resultsmentioning
confidence: 99%
“…[13] The surface energy matching between TC-PDI-F (36 mJ m À2 ) and LPD-SiO 2 (35 mJ m À2 ) could favor TC-PDI-F film adhesion and formation. [14][15][16] As the growth rate of LPD-SiO 2 depends on the growth temperature, we optimized the growth temperature at 40 8C and time for 8 hr to obtain smoother LPD-SiO 2 films. The thickness of LPD-SiO 2 is about 200 nm as confirmed by cross-sectional scanning electron microscopy (SEM).…”
Section: Lpd-sio 2 Dielectric Deposition and Characterizationmentioning
confidence: 99%
“…52,53 As interações discutidas também são importantes na formação de géis como no trabalho de Bhattacharjee e seu grupo 63 com a NDI 24, sistemas hóspede-hospedeiro envolvendo macrociclos com as NDIs 5, 9, 10, 25-29 64 ou a estabilização do radical da NDI 30 com o macrociclo cucurbit [7]uril. 65 Há ainda trabalhos elementares sobre a solubilidade, absortividade molar e uorescência de outras séries de diimidas naftálicas simétricas envolvendo as NDIs 10, 12, 21 e 31-34, 66,67 além de sensores com as NDIs 35-37 também para detecção de aminas. 68 O estudo do comportamento destas diimidas usando os seus espectros de absorção, emissão e voltametria cíclica elucidam propriedades espectroscópicas e eletrônicas importantes desta classe de moléculas e viabilizam o entendimento da possibilidade em uma série de aplicações.…”
Section: Diimidas Naftálicas Simétricas: Breve Revisãounclassified
“…no qual E LU M O (Fc) é obtido com cálculo teórico, no vácuo (-4,8 eV, ref. 21,46,67,181 ), e os outros dois termos são os valores de potenciais obtidos nos voltamogramas com E obs 1/2 (Fc/Fc + ) igual a zero em função do ajuste realizado. De forma geral os valores de energia para o orbital LUMO estão próximos de -3,7 eV 18 nas diimidas mas podem variar a partir das substituições realizadas na molécula.…”
Section: Pentóxido De Vanádio E Compósitos Vxg/diimidasunclassified