Photons, electrons, and acid yields in EUV photoresists: a progress report

Brainard, Robert L.; Hassanein, Elsayed; Li, Juntao; Pathak, Piyush; Thiel, B. L.; Cerrina, F.; Moore, Richard; Rodríguez, Miguel; Yakshinskiy, B. V.; Loginova, Elena; Madey, Theodore E.; Matyi, R. J.; Malloy, Matthew; Rudack, Andrew C.; Naulleau, Patrick; Wüest, Andrea; Dean, Kim

doi:10.1117/12.773869

Cited by 14 publications

(17 citation statements)

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“…Because the concentration of reacting species is known, the quantum yields (QYs) of these reactions are also known. Furthermore, at these longer wavelengths the quantum yields of PAG exposure do not exceed 100% [6].…”

Section: Introductionmentioning

confidence: 92%

“…Researchers [2,3,6,8,10,[14][15][16][17][18][19] have proposed that the dominant chemical mechanisms involved in EUV chemically amplified resists include: (1) electron trapping (or dissociative electron attachment), (2) hole-initiated chemistry, or (3) internal excitation (or dissociative electron excitation), as described below ( Figure 6). In electron trapping, a low energy electron (perhaps 0-5 eV [17]) may be trapped by a PAG molecule, occupying an antibonding orbital in the PAG.…”

Section: Reaction Mechanisms In Chemically Amplified Resistsmentioning

confidence: 99%

“…The absorption of EUV photons causes molecular electrons to be ejected with ~75-82 eV energy, leaving a radical-cation "hole" in the molecule [1][2][3][4][5][6]. These liberated electrons have sufficient energy to cause further ionization or other reactions.…”

Section: Introductionmentioning

confidence: 99%

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What We Don’t Know About EUV Exposure Mechanisms

Narasimhan

Wisehart

Grzeskowiak

et al. 2017

J. Photopol. Sci. Technol.

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The lithography community has studied EUV photoresists for nearly thirty years. Yet, some of the most basic details of the interaction of EUV photons with photoresists remain poorly understood. In a typical photochemical reaction using long-wavelength light ( = 157-1000 nm), photons create excited states in photoactive compounds, thereby creating known quantities of intermediates and photoproducts at measurable rates.The photochemical reactions occurring during EUV exposure are much more complex and, as yet, not fully explored. The 92 eV EUV photons ionize molecules in the resist, creating holes and free electrons, however, the numbers of these electrons created, their reaction mechanisms, lifetimes and reaction cross-sections are not well known. Here, we will discuss experimental results and provide insight into these poorly understood aspects of EUV exposure mechanisms.

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Section: Introductionmentioning

confidence: 92%

Section: Reaction Mechanisms In Chemically Amplified Resistsmentioning

confidence: 99%

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What We Don’t Know About EUV Exposure Mechanisms

Narasimhan

Wisehart

Grzeskowiak

et al. 2017

J. Photopol. Sci. Technol.

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“…35 and an outer σ of 0.55. Reasonable exposure latitude is seen down to 25-nm lines, and appreciable DOF is observed at all feature sizes.…”

Section: -128mentioning

confidence: 99%

“…We have tested three through-base resist series provided by Rohm and Haas based on commercially available XP 5435, XP 5271, and XP 5496 resist platforms as well as a throughbase and through-PAG resist series provided by the University at Albany [35] based on the experimental EH27 platform. Table 6.1 summarizes the resist thickness, post-application bake (PAB), PEB, and development parameters for each resist platform; all process parameters were recommended by the resist suppliers.…”

Section: Resistsmentioning

confidence: 99%

Extreme ultraviolet lithography: A few more pieces of the puzzle

Anderson¹

2009

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The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology.Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing.

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Overview of materials and processes for lithography

Lawson

Robinson

2016

Materials and Processes for Next Generation Lithography

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Photons, electrons, and acid yields in EUV photoresists: a progress report

Cited by 14 publications

References 0 publications

What We Don’t Know About EUV Exposure Mechanisms

What We Don’t Know About EUV Exposure Mechanisms

Extreme ultraviolet lithography: A few more pieces of the puzzle

Overview of materials and processes for lithography

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