Photonic Wire Bonding for Silicon Photonics III-V Laser Integration

Mitchell, Matthew; Lin, Becky; Taghavi, Iman; Yu, Shangxuan; Witt, Donald; Awan, Kashif M.; Gou, Steven; Young, Jeff F.; Chrostowski, Lukas

doi:10.1109/gfp51802.2021.9673842

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…Fabrication of the silicon photonic (SiP) chip, as well as the sample assembly and photonic wire bonding, was done inhouse. The chip was fabricated using the same in-house techniques as are used for on-chip laser integration [6], in which the SiP waveguides were patterned and etched using EBeam lithography (JEOL JBX-8100FS) and ICP-RIE etching (Oxford PlasmaPro 100 Cobra) and the cavity was patterned and etched using maskless lithography (Heidelberg MLA-150) and Bosch etching (SPTS Rapier DRIE). The SOA was attached to the cavity using a die bonder (Tresky T-3000 Pro) and indium reflow soldering.…”

Section: Fabricationmentioning

confidence: 99%

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Wang,

Lin,

Mitchell

et al. 2024

Integrated Optics: Devices, Materials, and Technologies XXVIII

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In this paper, we demonstrate near-C-band semiconductor optical amplifiers (SOAs) integrated on silicon photonic chips using photonic wire bonds (PWBs). PWBs are three-dimensional, nano-printed, freeform, polymer waveguides which provide efficient coupling between optical components. The SOAs used in this work were 975µm long and 400µm wide, with a 1.54µm wide, 1.9µm thick active region. Measurements on a connectorized SOA are presented, showing a peak on-chip gain of 10.6dB at 1510nm when applying a 150mA bias current to it (here we have not calibrated out the coupling losses at the two SOI-waveguide/PWB interfaces nor have we calibrated out the losses at the two PWB/SOA interfaces, indicating that the gain of the SOA is significantly higher than the measured 10.6dB). The PWBconnectorized SOA has a wavelength-dependent gain which was measured from 1480nm to 1555nm, the peak gain being obtained at 1510nm. In addition, the gain depends on the bias current applied, increasing with higher bias currents but saturating when the bias current exceeds 150mA. The PWB-connectorized SOA is also sensitive to the power of the input signal, the gain was larger for lower input powers (i.e., for powers below about -4.9dBm). Varying the polarization state of the input to our PWB-connectorized SOA changed the measured gain by 5.85dB.

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Section: Fabricationmentioning

confidence: 99%

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Wang,

Lin,

Mitchell

et al. 2024

Integrated Optics: Devices, Materials, and Technologies XXVIII

Self Cite

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“…Herein, we explore the use of photonic wire bonds (PWBs), which are flexible interconnections with low insertion loss for laser-to-chip and fiberto-chip integration. [22,23] They also have been applied in hybridintegrated compact optical transceivers. [24] Furthermore, PWBs have been employed to address the complex packaging requirements of neuromorphic photonic accelerator architectures.…”

Section: Introductionmentioning

confidence: 99%

Plug‐and‐Play Fiber‐Coupled Quantum Dot Single‐Photon Source via Photonic Wire Bonding

De Gregorio,

Yu,

Witt

et al. 2023

Adv Quantum Tech

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The collection of single‐photon emission from a quantum dot (QD) in a Bragg waveguide through a photonic wire bond (PWB) via free‐space resonant frequency pumping at 1.6 K is demonstrated. The in‐fiber single photons show a small multiphoton contribution, quantified by a low second order photon autocorrelation value of (background‐corrected) or (raw data). The decay time of the QD is measured to be ps. The PWB obviates the need for in‐cryostat alignment of the single‐photon source with an optical fiber and thus offers a route to scalable integration of quantum photonic devices in a cryogenic environment. Uniquely, the approach combines the QD‐waveguide technique, enabling resonant driving of individual QDs without the need for cross‐polarization filtering, and the PWB for deterministic, alignment‐free coupling of single‐photon sources to optical fibers.

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“…Our proof-of-concept demonstration is implemented on a silicon-on-insulator (SOI) platform. A 15 × 15, disordered microring lattice is used to generate the speckle patterns and a photonic wire bond (PWB) is used to connect the device to a fiber [30,31]. The fiber-to-chip interconnect had a minimum insertion loss of 1.45 dB/facet and a 3-dB bandwidth larger than 300 nm.…”

Section: Introductionmentioning

confidence: 99%

High-performance, intelligent, on-chip speckle spectrometer using two-dimensional silicon photonic disordered microring lattice

Lin¹,

Yu²,

Chen³

et al. 2023

Preprint

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High-performance integrated spectrometers are highly desirable for many applications ranging from mobile phones to space probes. Based on silicon photonic integrated circuit technology, we propose and demonstrate an on-chip speckle spectrometer consisting of a 15 ×15, two-dimensional (2D), disordered microring lattice. The proposed 2D, disordered microring lattice is simulated by the transfer-matrix method. The fabricated device features a spectral resolution better than 15 pm and an operating bandwidth larger than 40 nm. We also demonstrate that, based on the speckle patterns, our device can perform a spectrum classification using machine learning algorithms, which will have a huge potential in fast, intelligent material and chemical analysis.

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Photonic Wire Bonding for Silicon Photonics III-V Laser Integration

Cited by 7 publications

References 5 publications

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Plug‐and‐Play Fiber‐Coupled Quantum Dot Single‐Photon Source via Photonic Wire Bonding

High-performance, intelligent, on-chip speckle spectrometer using two-dimensional silicon photonic disordered microring lattice

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