Abstract:Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitax… Show more
“…Ferroelectricity in Rochelle salt was discovered in 1921 by J. Valasek [1], with the sign of spontaneous polarization (P s ) being controllable by an external electric field. Since this discovery, many efforts have been made to enhance technological applications, such as field-effect transistors (FeFET) [2], sensors [3], photonic devices [4], and optoelectronics [5]. However, the constant demand for higher-performance devices has necessitated increased efforts toward miniaturization in nanoelectronics, and consequently, toward the preparation of thin and ultra-thin ferroelectric films.…”
Over the last few years, research activities have seen two-dimensional (2D) materials become protagonists in the field of nanotechnology. In particular, 2D materials characterized by ferroelectric properties are extremely interesting, as they are better suited for the development of miniaturized and high-performing devices. Here, we summarize the recent advances in this field, reviewing the realization of devices based on 2D ferroelectric materials, like FeFET, FTJ, and optoelectronics. The devices are realized with a wide range of material systems, from oxide materials at low dimensions to 2D materials exhibiting van der Waals interactions. We conclude by presenting how these materials could be useful in the field of devices based on magnons or surface acoustic waves.
“…Ferroelectricity in Rochelle salt was discovered in 1921 by J. Valasek [1], with the sign of spontaneous polarization (P s ) being controllable by an external electric field. Since this discovery, many efforts have been made to enhance technological applications, such as field-effect transistors (FeFET) [2], sensors [3], photonic devices [4], and optoelectronics [5]. However, the constant demand for higher-performance devices has necessitated increased efforts toward miniaturization in nanoelectronics, and consequently, toward the preparation of thin and ultra-thin ferroelectric films.…”
Over the last few years, research activities have seen two-dimensional (2D) materials become protagonists in the field of nanotechnology. In particular, 2D materials characterized by ferroelectric properties are extremely interesting, as they are better suited for the development of miniaturized and high-performing devices. Here, we summarize the recent advances in this field, reviewing the realization of devices based on 2D ferroelectric materials, like FeFET, FTJ, and optoelectronics. The devices are realized with a wide range of material systems, from oxide materials at low dimensions to 2D materials exhibiting van der Waals interactions. We conclude by presenting how these materials could be useful in the field of devices based on magnons or surface acoustic waves.
“…The gray-scale photomask process needs costly photomask and experimental tuning of the geometry of the photomask. 30) In this study, we present a simple fabrication process of vertical-taper structure that is realized by a combination of our step-and-exposure lithography 31,32) and dry etching. The process can realize the precise control of the thickness and the angle of silicon waveguides without annealing at high temperatures or special processes.…”
This paper describes a simple fabrication process of vertical-taper structures which can locally tune the thickness of silicon photonic devices. For low-loss spot-size conversion, taper angles less than 10° are required. To fabricate the gradual-slope shape of the vertical tapers, we have developed a step-and-exposure lithography process, which is realized by repeated light exposure to photoresist and movement of the wafer stage by using commercial steppers. The process is conducted at a lower temperature (~120°C) than the conventional process and is compatible with the CMOS process. Also, we have made a model of the lithography to predict the angle of the taper. Theoretical angles are consistent with the experimental results. We demonstrate the conversion of a 400-nm-thick silicon waveguide to 220 nm, whose length was 2.4 μm and insertion loss was measured to be less than 0.3 dB. The process enables to choose the optimal thickness for each silicon-photonic device.
“…34 In 2019, a prospect for future research, especially about ferroelectric thin film (e.g., PLZT) applied in optical interconnection devices, was reported by Abe who integrated optical modulator, spot-size converters (SSCs) and a variable optical attenuator on the PLZT thin film platform. 35 However, the PLZT films they developed only possess a linear EO effect. The EO effect of PLZT films is very different from that of PLZT ceramic, because the film thickness, the annealing temperature, and conditions will have great influence on the EO characteristics.…”
mentioning
confidence: 99%
“…Meanwhile, much research about PLZT thin films showed a huge linear EO effect, which is used in integrated nanophotonic devices . In 2019, a prospect for future research, especially about ferroelectric thin film (e.g., PLZT) applied in optical interconnection devices, was reported by Abe who integrated optical modulator, spot-size converters (SSCs) and a variable optical attenuator on the PLZT thin film platform . However, the PLZT films they developed only possess a linear EO effect.…”
Developing large electro-optic (EO) effect material is crucial technology for developing current levels of optical communication, and the lanthanum-modified lead zirconate titanate (PLZT) transparent thin films with an excellent theoretical quadratic EO coefficient has been paid great attention. Highquality PLZT thin films have been fabricated by improved sol−gel, including multiple spin coating and plasma annealing. The XRD patterns show the PLZT thin films with preferred (110) orientations and highly crystallized on the ITO/SiO 2 substrate. The PLZT thin films are smooth and crack-free and can achieve a maximum transmittance of 93.8%. The piezo-response force microscopy images of the thin film reveal that non-180°domain determines the magnitude of the EO coefficient and plays vital role in the piezoelectric response. Furthermore, the effective quadratic EO coefficients of PLZT thin films are obtained by the designed test system. The quadratic EO measurements indicate excellent quadratic Kerr coefficient of 3.54 × 10 −15 m 2 /V 2 , and the optical modulation effect of the EO modulator based on PLZT thin films is almost consistent with the theory and has low insertion losses. The PLZT thin films made in this study are a competitive candidate material as an optical modulator for modern optical communication.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.