Photonic integrated receiver for 40 Gbit∕s transmission

Mason, B.; Chandrasekhar, S.; Ougazzaden, A.; Lentz, C.W.; Geary, J.; Buhl, L. L.; Peticolas, L. J.; Glogovsky, K.G.; Freund, J. M.; Reynolds, L.D.; Przybylek, G.J.; Walters, F.S.; Sirenko, A. A.; Boardman, John; Kercher, Terry L.; Rader, M.T.; Grenko, J. A.; Monroe, Don; Ketelsen, L.J.P.

doi:10.1049/el:20020778

Cited by 21 publications

(7 citation statements)

References 5 publications

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“…To our knowledge, this is the best sensitivity ever reported for a single module receiver at 40 Gbit/s. This is a significant improvement of more than 3 dB compared to the previous best integrated SOA-PIN receiver which also worked only in TE polarization 8 . This is also very close to the result achieved with two separate modules 9 (-22.5 dBm at BER=10 -9 ), which increases significantly the receiver cost.…”

Section: Receiver Characteristicsmentioning

confidence: 78%

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

Caillaud

Chanclou

Blache

et al. 2014

2014 the European Conference on Optical Communication (ECOC)

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Section: Receiver Characteristicsmentioning

confidence: 78%

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

Caillaud

Chanclou

Blache

et al. 2014

2014 the European Conference on Optical Communication (ECOC)

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“…A recent study about the applicability of SOAs in PONs concluded that managing the optical power budget (>29 dB) for greater than 10 Gb/s PON such as 25 Gb/s and 50 Gb/s while using state-of-the-art low-cost components is challenging and will require pre/booster or both amplifiers [6]. Monolithic III-V photonic integrated pre-amplified optical receivers that integrate SOA and photodiodes [7,8] and TIA [9] have already been demonstrated for up to 40 Gb/s high speed PONs. Among the different photonic integration technologies, silicon photonics is particularly promising for ONT transceivers due to large scale integration capability, low cost, and reliability.…”

Section: Introductionmentioning

confidence: 99%

Lossless WDM PON Photonic Integrated Receivers Including SOAs

et al. 2019

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The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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“…While several monolithically integrated OPAD designs are known from the literature [5][6][7][8], none of them is, simultaneously, compatible with the MGVI platform (e.g. design [5] uses a bottom contact, [6] requires re-growth and [7] has no passive waveguide) and suitable for applications in fiber-optics systems (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…design [5] uses a bottom contact, [6] requires re-growth and [7] has no passive waveguide) and suitable for applications in fiber-optics systems (e.g. design [8], based on a compressively strained quantum well gain medium, does not address the issue of polarization sensitivity).…”

Section: Introductionmentioning

confidence: 99%

Optically pre-amplified photodetectors for multi-guide vertical integration in InP

Tolstikhin

Watson

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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Figure 1. A schematic of an OPAD building block and a functional equivalent featuring a semicondutor optical amplifier, a passband filter and a PIN photodetector. Inset: a scanning electron micrograph of a tapered activepassive waveguide transition area of the OPAD chip. AbstractAn integrated optically pre-amplified photodetector, featuring waveguide gain and absorption sections defined on the same active waveguide layers atop a common passive waveguide, is reported. The device demonstrates high responsivity while exhibiting little polarization sensitivity

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Photonic integrated receiver for 40 Gbit∕s transmission

Cited by 21 publications

References 5 publications

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON

Lossless WDM PON Photonic Integrated Receivers Including SOAs

Optically pre-amplified photodetectors for multi-guide vertical integration in InP

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