Photonic integrated circuits for terahertz source generation

Hou, Lianping; Song, Tao; Hou, Bin; Marsh, J.H.

doi:10.1049/iet-opt.2019.0089

Cited by 4 publications

(1 citation statement)

References 24 publications

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“…To achieve higher optical power and keep the noise figure at the minimum, a hybrid III–V silicon nitride laser has achieved a record on-chip power of up to 20.7 dBm, a tuning range of 120 nm, and an ultralow linewidth of 320 Hz [ 80 ]. Although the existing integrated lasers which have been used for THz generation are mostly based on III–V distributed feedback (DFB) and distributed Bragg Reflector (DBR) lasers [ 81 , 82 , 83 , 84 , 85 , 86 , 87 ], as shown in Figure 5 b,c, it can be predicted that hybrid and heterogeneously integrated silicon lasers with higher performance have the potential to achieve the target metrics and extend their applicability in THz band.…”

Section: Silicon Photonics For Thz Techniquesmentioning

confidence: 99%

A Review on Terahertz Technologies Accelerated by Silicon Photonics

Xie

Zhou

et al. 2021

Nanomaterials

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

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Section: Silicon Photonics For Thz Techniquesmentioning

confidence: 99%

A Review on Terahertz Technologies Accelerated by Silicon Photonics

Xie

Zhou

et al. 2021

Nanomaterials

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Gallium arsenide whispering gallery mode resonators for terahertz photonics

Suresh,

Schwefel,

Vogt

2023

Opt. Express

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As the field of terahertz (THz) photonics advances, we present a monolithic gallium arsenide (GaAs) disk-shaped whispering gallery mode resonator that has potential as a component in THz nonlinear optics. GaAs is a material with significant optical nonlinearity which can be enhanced when the crystal is shaped into a microdisk resonator. A 4-mm-disk-resonator was fabricated using single-point diamond turning and was characterized to obtain a quality (Q) factor of 2.21k at ∼150 GHz and 1.41k at ∼300 GHz. We also demonstrated the blue-shifting of up to ∼0.3 GHz of the THz modes using a block of metal. This post-fabrication degree of freedom could be useful for phase-matching requirements for nonlinear optical processes, such as detection based on optical up-conversion of THz radiation. This proof-of-concept demonstration can pave the way for the implementation of a compact, tunable and efficient device which could be integrated into nonlinear photonic platforms for THz generation, manipulation and detection.

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Dual-wavelength distributed feedback laser array based on four-phase-shifted sampled Bragg grating for terahertz generation

Fan,

Yuan,

Al-Rubaiee

et al. 2024

Opt. Lett.

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We propose and experimentally demonstrate a dual-wavelength distributed feedback (DFB) laser array utilizing a four-phase-shifted sampled Bragg grating. By using this grating, the coupling coefficient is enhanced by approximately 2.83 times compared to conventional sampled Bragg gratings. The devices exhibit a stable dual-mode lasing achieved by introducing further π-phase shifts at 1/3 and 2/3 positions along the cavity. These devices require only one stage of lithography to define both the ridge waveguide and the gratings, mitigating issues related to misalignment between them. A dual-wavelength laser array has been fabricated with frequency spacings of 320 GHz, 500 GHz, 640 GHz, 800 GHz, and 1 THz. When integrated with semiconductor optical amplifiers, the output power of the device can reach 23.6 mW. Furthermore, the dual-wavelength lasing is maintained across a wide range of injection currents, with a power difference of <3 dB between the two primary modes. A terahertz (THz) signal has been generated through photomixing in a photoconductive antenna, with the measured power reaching 12.8 µW.

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Photonic integrated circuits for terahertz source generation

Cited by 4 publications

References 24 publications

A Review on Terahertz Technologies Accelerated by Silicon Photonics

A Review on Terahertz Technologies Accelerated by Silicon Photonics

Gallium arsenide whispering gallery mode resonators for terahertz photonics

Dual-wavelength distributed feedback laser array based on four-phase-shifted sampled Bragg grating for terahertz generation

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