1998
DOI: 10.1109/2944.720491
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Photonic integrated circuits fabricated using ion implantation

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Cited by 116 publications
(54 citation statements)
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“…impurity induced interdiffusion (Charbonneau et al 1998), impurity-free vacancy disordering (Si et al 1998), laser induced disordering (McKee et al 1997, focused ion-beam induced intermixing (Ateckle et al 1995), proton irradiation (Tan et al 1995) etc. These methods can be arranged into two broad groups viz.…”
Section: Quantum Well Intermixingmentioning
confidence: 98%
“…impurity induced interdiffusion (Charbonneau et al 1998), impurity-free vacancy disordering (Si et al 1998), laser induced disordering (McKee et al 1997, focused ion-beam induced intermixing (Ateckle et al 1995), proton irradiation (Tan et al 1995) etc. These methods can be arranged into two broad groups viz.…”
Section: Quantum Well Intermixingmentioning
confidence: 98%
“…As an alternative, quantum well intermixing techniques [7] are capable of tuning the absorption wavelength of quantum wells after growth. The techniques have been used successfully in fabricating optoelectronic devices [8][9][10][11][12] such as lasers and waveguides. Quantum well intermixing techniques include [7]: laser induced disordering, impurity free vacancy disordering, impurity induced disordering and ion implantation induced disordering, and each has been used to tune the detection wavelength of QWIPs [13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Photonic integrated circuits (PICs) offer significant performance advantages over discrete devices, adding flexibility and functionality while reducing final system cost and size [1,2]. To fabricate monolithic integrated devices, it is necessary to obtain large bandgap energy shift between the functional elements.…”
Section: Introductionmentioning
confidence: 99%