Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

Sugawara, Kazuo; Kawasaki, Tsuyoshi; Tamamushi, Gen; Mastura, Hussin; Dobroiu, Adrian; Yoshida, Takeshi; Suemitsu, Tetsuya; Fukidome, Hirokazu; Suemitsu, Maki; Ryzhii, V.; Iwatsuki, K.; Kuwano, Shigeru; Kani, Jun‐ichi; Tanida, Jun; Otsuji, T.

doi:10.1109/jlt.2015.2505146

Cited by 14 publications

(1 citation statement)

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“…Key components for implementation of the B5G networks are carrier conversion devices that are compact, efficient, delay-less, low-power-consumption, and capable of such a direct, coherent conversion. For this purpose, we have studied the so-called photonic double-mixing by fieldeffect transistors [2][3][4] for the carrier frequency down-conversion from optical data signals to wireless signals with the identical modulation format. The double-mixing comprises two consecutive processes (1): photomixing of an optical carrier signal with data coding and an optical subcarrier signal, which generates the difference-frequency signal in the channel and (2) RF mixing of the photomixing signal and a LO (Local Oscillation) signal input to the gate, which generates an IF (Intermediate Frequency) signal.…”

Section: Introductionmentioning

confidence: 99%

Photonic double-mixing by UTC-PD-integrated HEMT for optical-to-sub-THz/THz carrier frequency down-conversion

Satou,

Otsuji

2023

Terahertz Emitters, Receivers, and Applications XIV

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We review recent progress in the development of the UTC-PD-integrated HEMT carrier frequency down-converter as an optical-to-sub-terahertz (THz)/THz carrier frequency down-converter for use in the future beyond 5G wireless networks. First, we investigate the effect of the scaling of the UTC-PD active area on the double-mixing conversion gain. We show that the conversion gain monotonically increases as the active-area size is reduced, due to the suppression of the in-plane diffusion of photoelectrons in the UTC-PD absorption layer. Second, we examine the employment of intensified, lownoise subcarrier signal input to the device enabled by an optical injection-locking technique.

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Section: Introductionmentioning

confidence: 99%