Wide Bandgap Semiconductors 2007
DOI: 10.1007/978-3-540-47235-3_3
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Photonic Devices

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Cited by 2 publications
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“…Likewise, AlGaN, AlN and ZnO present piezoelectric properties ideal to build resonator devices for high mass sensitive sensor devices and for biosensor applications (Otoole et al 1992;Deger et al 1998). AlN based light emitter devices (LEDs) are expected to emit in the deep UV (~210 nm) which makes it appealing for the detection of small toxic and cancer causing particles (Kawakami et al 2007). Silicon carbide (SiC), possesses good biocompatibility (Kotzar et al 2002;Coletti et al 2007b;Frewin et al 2009;) in addition to high chemical inertness and can be used to make different types of electronic devices with similar processes used in Si processing.…”
Section: Introductionmentioning
confidence: 99%
“…Likewise, AlGaN, AlN and ZnO present piezoelectric properties ideal to build resonator devices for high mass sensitive sensor devices and for biosensor applications (Otoole et al 1992;Deger et al 1998). AlN based light emitter devices (LEDs) are expected to emit in the deep UV (~210 nm) which makes it appealing for the detection of small toxic and cancer causing particles (Kawakami et al 2007). Silicon carbide (SiC), possesses good biocompatibility (Kotzar et al 2002;Coletti et al 2007b;Frewin et al 2009;) in addition to high chemical inertness and can be used to make different types of electronic devices with similar processes used in Si processing.…”
Section: Introductionmentioning
confidence: 99%