Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

Nozaki, Kengo; Matsuo, Shinji; Fujii, T.; Takeda, Koji; Ono, Masaaki; Shakoor, Abdul; Kuramochi, Eiichi; Notomi, Masaya

doi:10.1364/optica.3.000483

Cited by 69 publications

(21 citation statements)

References 32 publications

(45 reference statements)

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“…If we consider deep learning framework compatible with fixed point arithmetic (ρ = N ), we see that, unlike in the electronic case, the capacitive charging scales with N rather than N 2 . Choosing a high performance detector with C d ∼ 1 fF [77], V r = 0.5 V (bringing the optical link energy to <500 aJ, see Ref. [16] for further discussion), and assuming a fairly efficient laser source (η = 0.2), we start to see a difference around N > 500 as shown in Fig.…”

Section: B Switching and Driving Energymentioning

confidence: 99%

Photonic Multiply-Accumulate Operations for Neural Networks

Nahmias

Lima

Tait

et al. 2020

IEEE J. Select. Topics Quantum Electron.

225

133

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It has long been known that photonic communication can alleviate the data movement bottlenecks that plague conventional microelectronic processors. More recently, there has also been interest in its capabilities to implement low precision linear operations, such as matrix multiplications, fast and efficiently. We characterize the performance of photonic and electronic hardware underlying neural network models using multiply-accumulate operations. First, we investigate the limits of analog electronic crossbar arrays and on-chip photonic linear computing systems. Photonic processors are shown to have advantages in the limit of large processor sizes (>100 µm), large vector sizes (N > 500), and low noise precision (≤4 bits). We discuss several proposed tunable photonic MAC systems, and provide a concrete comparison between deep learning and photonic hardware using several empiricallyvalidated device and system models. We show significant potential improvements over digital electronics in energy (>10 2), speed (>10 3), and compute density (>10 2). Index Terms-Artificial intelligence, neural networks, analog computers, analog processing circuits, optical computing. I. INTRODUCTION P HOTONICS has been well studied for its role in communication systems. Fiber optic links currently form the backbone of the world's telecommunications infrastructure, vastly overshadowing the best electronic communication standards in information capacity. Light signals have many advantageous properties for the transfer of information. For one, a photonic waveguide, with diameters ranging from those in fiber (∼80 μm) to those fabricated on-chip (∼500 nm), can carry information at enormous bandwidth densities-i.e., terabits per secondwith an energy efficiency that scales nearly independent of distance. This density is possible thanks to signal parallelization in photonic waveguides, in which hundreds of high speed, multiplexed channels can be independently modulated and detected. Photonic channels also experience less distortion, jitter,

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Section: B Switching and Driving Energymentioning

confidence: 99%

Photonic Multiply-Accumulate Operations for Neural Networks

Nahmias

Lima

Tait

et al. 2020

IEEE J. Select. Topics Quantum Electron.

225

133

View full text Add to dashboard Cite

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“…For the resistor-loaded receiver, on the other hand, the required voltage at the front end basically determines the optical power. At this situation, the noise level is enough low for the error-free operation [10].…”

Section: Requirement For Resistor-loaded Photoreceivermentioning

confidence: 97%

“…We employed an electro-optic (EO) probe to measure the voltage generation in the PhC-PDs, which revealed a conversion efficiency of as high as 4 kV/W. The expected bandwidth after removing the parasitic wiring elements exceeds 10 GHz [10]. This suggests that the optical energy required for generating a CMOS voltage level is less than 1 fJ/bit, which can be obtained without electrical amplification and therefore dominates the total energy consumption.…”

Section: Introductionmentioning

confidence: 99%

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Nozaki

Matsuo

Takeda

et al. 2017

IEICE Trans. Electron.

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SUMMARYAn ultra-compact InGaAs photodetector (PD) is demonstrated based on a photonic crystal (PhC) waveguide to meet the demand for a photoreceiver for future dense photonic integration. Although the PhC-PD has a length of only 1.7 μm and a capacitance of less than 1 fF, a high responsivity of 1 A/W was observed both theoretically and experimentally. This low capacitance PD allows us to expect a resistor-loaded receiver to be realized that requires no electrical amplifiers. We fabricated a resistor-loaded PhC-PD for light-to-voltage conversion, and demonstrated a kV/W efficiency with a GHz bandwidth without using amplifiers. This will lead to a photoreceiver with an ultralow energy consumption of less than 1 fJ/bit, which is a step along the road to achieving a dense photonic network and processor on a chip. key words: photonic crystal waveguide, photodetector, buried heterostructure, optical interconnection

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“…With the rapid development of optoelectronic technology, optoelectronic devices have entered the nano era [1,2], and many nanotechnology has been used in silicon photonics [3][4][5]. The reduced size of the device can improve the utilization rate of the chip area, but also the higher performance of the device is required, and the silicon epitaxial material is selected to make optoelectronic devices with higher performance.…”

Section: Introductionmentioning

confidence: 99%

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Feng

Xue

2018

Advances in Condensed Matter Physics

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The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI) micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

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Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

Cited by 69 publications

References 32 publications

Photonic Multiply-Accumulate Operations for Neural Networks

Photonic Multiply-Accumulate Operations for Neural Networks

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

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