Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

Zhang, Hewei; Tian, Ye; Li, Qian; Ding, Wenqiang; Yu, Xuzhen; Lin, Zebiao; Feng, Xuyang; Zhao, Yanli

doi:10.3390/s22207724

Cited by 3 publications

(2 citation statements)

References 33 publications

(52 reference statements)

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“…Especially from the defect reduction and multiplication gain enhancement perspectives, which will greatly improve the device performance. Until now, InP and InAlAs layers were employed as the multiplication region; Si is also a promising candidate for the multiplication region [ 180 , 181 , 182 , 183 , 184 , 185 ]. Wafer-bonded InGaAs/Si APDs were proposed to greatly improve the device performance ( Figure 57 ), which gives researchers a novel technical route to optimize the device architecture [ 186 ].…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…Currently, the primary methods for preparing InGaAs/Si APD include epitaxial growth technology [15] and heterogeneous bonding technology [16,17]. However, due to the 7.7% lattice mismatch between InGaAs and Si, epitaxial growth of InGaAs on Si results in a high linear dislocation density [18], leading to a decline in avalanche photodiode performance.…”

Section: Introductionmentioning

confidence: 99%

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Ke,

Wang,

Huang

et al. 2024

Phys. Scr.

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The avalanche photodiode (APD) is a prototypical example of a fast and high-gain detector, particularly in the infrared band, where it plays a crucial role in both military and civil optoelectronic devices. The combination of indium gallium arsenide (InGaAs) and silicon (Si) offers an ideal solution for achieving high-performance APDs. For traditional InGaAs/Si APDs, the incorporation of a p-Si charge modulation layer between InGaAs and Si is necessary for electric field modulation. This ensures that a high electric field is maintained in the multiplication layer while keeping it low in the absorption layer. However, the preparation of the p-Si charge modulation layer necessitates a tedious and expensive ion implantation process. Besides, the ion implantation process can also lead to material surface contamination that significantly affects the performance of the device. In this paper, an InGaAs/Si APD without the charge layer is reported. This approach is based on semiconductor direct bonding technology, wherein a groove ring is introduced into the bonding interface to replace the charge layer to regulate the electric field distribution. The electric field of the absorption layer and the multiplier layer is controlled by adjusting the number of grooved rings. By introducing 11 grooved rings into the bonding interface, we achieve a remarkable gain bandwidth product of 88.55 GHz. These findings hold significant implications for the future development of non-charge layer InGaAs/Si APDs with high-gain bandwidth products.

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Performances Analysis for Core-Shell Si/In_xGa_1-xAs FinFET

Lu,

Chen,

Huang

et al. 2024

IEEE Trans. Electron Devices

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Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

Cited by 3 publications

References 33 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Performances Analysis for Core-Shell Si/In_xGa_1-xAs FinFET

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Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

Cited by 3 publications

References 33 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Performances Analysis for Core-Shell Si/InxGa1-xAs FinFET

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Performances Analysis for Core-Shell Si/In_xGa_1-xAs FinFET