Photon-stimulated field emission from semiconducting (10,0) and metallic (5,5) carbon nanotubes

Mayer, A.; Miskovsky, N. M.; Cutler, P.H.

doi:10.1103/physrevb.65.195416

Cited by 39 publications

(42 citation statements)

References 23 publications

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“…They also noted that the emission was improved when the end of the tubes were convex rather than flattop. 16 They further showed that the emission behavior of bundles of open and closed tubes were dependent on two factors; whether the tubes were open or closed and the role of proximity field screening by neighboring tubes. 16 Closed tubes are found to emit less current than open tubes and that their field emission ͑FE͒ characteristics are found to be more sensitive to the local electric field.…”

mentioning

confidence: 99%

“…16 They further showed that the emission behavior of bundles of open and closed tubes were dependent on two factors; whether the tubes were open or closed and the role of proximity field screening by neighboring tubes. 16 Closed tubes are found to emit less current than open tubes and that their field emission ͑FE͒ characteristics are found to be more sensitive to the local electric field. Theoretical investigations of field screening due to neighboring tubes are important in explaining the FE characteristics such as threshold field and emission site density.…”

mentioning

confidence: 99%

“…Mayer and colleagues 16 have used a transfer matrix technique to compare the field emission behavior between metallic single-walled nanotubes ͑SWNT͒ and a multiwalled nanotube ͑MWNT͒ composed of the three single-walled tubes. They observed that the emission from the MWNT is larger than the total current obtained from consideration of the individual walls separately.…”

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Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter

Smith¹,

Carey²,

Forrest³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The effect on the field emission characteristics of the aspect ratio of an isolated emitter, together with the position of the anode electrode are reported. We show by computational simulation that the field enhancement factor ␤ is only dependant on the emitter height h, radius r, when the anode to cathode separation D is greater than three times the height of the emitter away from the tip. In this regime the enhancement factor is independent of the anode location and approaches a value depicted by h and r alone and is described by the expression ␤ 0 = ͑1+ ͱ h / ␣r͒ m where ␣ = 2 and m = 1. As the anode is brought close to the tip of the emitter, the emitter tip and anode approximate a parallel plate configuration and the enhancement factor tends to unity. Extracted enhancement factor and threshold fields are described by a modified applied electric field taking D − h as the separation. 1 have shown to possess a fascinating structure, and their use as electron sources in vacuum microelectronics and nanoelectronics has been widely reported.2 The mechanism of field-induced electron emission from a nanotube is understood to be due to the applied electric field undergoing an increase at the tip of the CNT, often referred to as the field enhancement factor ␤. For a single, isolated CNT, the value of enhancement factor is believed to be dependant on the length, radius, and type of structure, i.e., multiwalled ͑MWNT͒, singlewalled ͑SWNT͒, open or closed cap: This has been subject to several computational and experimental investigations.3-8 Geometric enhancement is not just applicable to CNT but also exists in a number of other tip-based structures including: SiC nanowires, 9 MoO 3 nanobelts, 10 tungsten nanowires, 11 spindt tips, 12 and copper sulphide nanowire arrays. 13 Much of the analysis performed on experimental data has relied upon analysis of the emission current I to field E ͑or voltage V͒ characteristics using the wellknown field emission mechanism of Fowler and Nordheim.14 The standard analysis often involves a plot of the log͑I / E 2 ͒ versus 1 / E ͑or equally log I / V 2 against 1 / V͒ and from the slope of the graph an approximate value for the field enhancement factor ␤ can be extracted. The role of ␤ is the enhancement of the applied macroscopic electric field such that under the action of the local electric field, tunneling of electrons from the Fermi level, into the vacuum, through the potential barrier becomes possible. The interpretation of ␤, which is a dimensionless quantity if electric field rather than voltage is used in the analysis, is therefore of great importance.There have been a number of attempts to model the behaviour of ␤ for a range of nanotube height and radius. Early work by Dyke and Dolan 15 showed that for a planar anode and a sphere-on-cone emitter the local field enhancement ͑neglecting V / d͒ close to the tip of the emitter was given bywhere ␤ L is the local field enhancement due to the emitter shape, d is the emitter-anode gap, and n is related to the cone opening angle ͑for ...

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confidence: 99%

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Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter

Smith¹,

Carey²,

Forrest³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, we have not been able to find any presentation by With optical radiation, where the effects of the photon energy may not be neglected, the major correction to these equations is the effect of a resonance between tunneling electrons and a radiation field (Hagmann, 1995A). This resonance, which is caused by reinforcement of the wave function through virtual photon processes, was later confirmed by others (Mayer & Vigneron, 2000;Mayer et al, 2002Mayer et al, , 2003. Figures 1 and 2 show the gain in the power flux density, which increases E 1 and E 2 in Eqs.…”

Section: Introductionmentioning

confidence: 90%

“…Figures 1 and 2 show the gain in the power flux density, which increases E 1 and E 2 in Eqs. (4) and (5), for the resonance with tungsten emitters (Mayer & Vigneron, 2000) and (5, 5) armchair (metallic) CNT emitters (Mayer et al, 2002). Modifying Eqs.…”

Section: Introductionmentioning

confidence: 99%

Broadband Terahertz Source Based on Photomixing in Laser-Assisted Field Emission with Clusters of Carbon Nanotubes

Hagmann¹

2010

Carbon Nanotubes

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Diamant‐Nanodrähte: Herstellung, Struktur, Eigenschaften und Anwendungen

Yu¹,

Wu²,

Zhi³

2014

Angewandte Chemie

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Nanodrähte aus sp3‐C‐C‐gebundenem Diamant sind Halbleiter mit einer breiten Bandlücke und einer Kombination ausgezeichneter Eigenschaften wie einer negativen Elektronenaffinität, chemischer Inertheit, einem hohen Elastizitätsmodul, höchster Härte und höchster thermischer Leitfähigkeit bei Raumtemperatur. Über die Herstellung von 1D‐Diamant‐Nanodrähten können die zentralen Eigenschaften von Diamant durch Erhöhen des Verhältnisses von Oberfläche zu Volumen gesteuert und verbessert werden. Der theoretische Vergleich mit Kohlenstoff‐Nanoröhrchen zeigt, dass Diamant‐Nanodrähte energetisch und mechanisch existenzfähige Strukturen sind – die reproduzierbare Synthese kristalliner Diamant‐Nanodrähte bleibt aber schwierig. Wir geben eine aktuelle und umfassende Übersicht über Diamant‐Nanodrähte, in der wir ihre Synthese, Strukturen, Eigenschaften und Anwendungen diskutieren.

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Photon-stimulated field emission from semiconducting (10,0) and metallic (5,5) carbon nanotubes

Cited by 39 publications

References 23 publications

Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter

Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter

Broadband Terahertz Source Based on Photomixing in Laser-Assisted Field Emission with Clusters of Carbon Nanotubes

Diamant‐Nanodrähte: Herstellung, Struktur, Eigenschaften und Anwendungen

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