Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays

Zabotnov, S. V.; Kholodov, M.; Georgobiani, Veronika A.; Presnov, D. E.; Golovan, L. A.; Кашкаров, П. К.

doi:10.1088/1612-2011/13/3/035902

Cited by 7 publications

(5 citation statements)

References 31 publications

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“…The obtained thicknesses were 25 ± 3 μm and 80 ± 5 μm for the lowdoped and heavily-doped samples, respectively. The metal-assisted chemical etching (MACE) technique [33,36] was employed to fabricate Si-NW arrays that further served as targets for PLAL. The same two types of low-doped and heavilydoped Si wafers were etched with MACE.…”

Section: Methodsmentioning

confidence: 99%

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Nanoparticles Produced via Laser Ablation of Porous Silicon and Silicon Nanowires for Optical Bioimaging

Zabotnov

Skobelkina

Сергеева

et al. 2020

Sensors

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Modern trends in optical bioimaging require novel nanoproducts combining high image contrast with efficient treatment capabilities. Silicon nanoparticles are a wide class of nanoobjects with tunable optical properties, which has potential as contrasting agents for fluorescence imaging and optical coherence tomography. In this paper we report on developing a novel technique for fabricating silicon nanoparticles by means of picosecond laser ablation of porous silicon films and silicon nanowire arrays in water and ethanol. Structural and optical properties of these particles were studied using scanning electron and atomic force microscopy, Raman scattering, spectrophotometry, fluorescence, and optical coherence tomography measurements. The essential features of the fabricated silicon nanoparticles are sizes smaller than 100 nm and crystalline phase presence. Effective fluorescence and light scattering of the laser-ablated silicon nanoparticles in the visible and near infrared ranges opens new prospects of their employment as contrasting agents in biophotonics, which was confirmed by pilot experiments on optical imaging.

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Section: Methodsmentioning

confidence: 99%

“…The metal-assisted chemical etching (MACE) technique [ 33 , 36 ] was employed to fabricate Si-NW arrays that further served as targets for PLAL. The same two types of low-doped and heavily-doped Si wafers were etched with MACE.…”

Section: Methodsmentioning

confidence: 99%

Nanoparticles Produced via Laser Ablation of Porous Silicon and Silicon Nanowires for Optical Bioimaging

Zabotnov

Skobelkina

Сергеева

et al. 2020

Sensors

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“…In all, as yet it has been shown that SiNWs are found to process such remarkable optical properties as visible photoluminescence (PL) [ 91 , 92 ], very low total reflection [ 92 , 93 ], enhancement of Raman scattering [ 92 , 93 , 94 ], coherent anti-Stokes light scattering [ 95 ], interband PL [ 93 , 96 ], and efficiency of generation of third harmonics whereby light is generated at a wavelength which is one-third of the pump wavelength [ 92 , 97 ].…”

Section: Silicon Nanowire Propertiesmentioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

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“…The reaction is catalyzed by metal nanoparticles such as Au [10,12], Ag [13], or Pt [10,11] at the substrate surface, and the oxidizing agents are H 2 O 2 [10][11][12][13], KMnO 4 [14], or Fe(NO 3 ) 3 [15]. It has been shown that SiNWs, which were obtained by MACE, are found to possess such remarkable optical properties as visible photoluminescence (PL) [16], extremely low total reflection [17,18], enhancement of Raman scattering [17,[19][20][21], coherent anti-Stokes light scattering [22], interband PL [17,[19][20][21] and efficiency of generation of third harmonics [23] in comparison with the corresponding intensities for c-Si, and sensitivity of visible PL to molecular surroundings [24]. However, HF is rather toxic and may also result in hypocalcemia and hypomagnesemia [25].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

Gonchar¹,

Zubairova²,

Schleusener³

et al. 2017

Nano Online

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Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH 4 F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

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Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays

Cited by 7 publications

References 31 publications

Nanoparticles Produced via Laser Ablation of Porous Silicon and Silicon Nanowires for Optical Bioimaging

Nanoparticles Produced via Laser Ablation of Porous Silicon and Silicon Nanowires for Optical Bioimaging

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

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